Gate control of the electron spin-diffusion length in semiconductor quantum wells

The spin diffusion length is a key parameter to describe the transport properties of spin polarized electrons in solids. Electrical spin injection in semiconductor structures, a major issue in spintronics, critically depends on this spin diffusion length. Gate control of the spin diffusion length co...

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Detalles Bibliográficos
Autores principales: Wang, G., Liu, B. L., Balocchi, A., Renucci, P., Zhu, C. R., Amand, T., Fontaine, C., Marie, X.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3791469/
https://www.ncbi.nlm.nih.gov/pubmed/24052071
http://dx.doi.org/10.1038/ncomms3372

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3791469/
https://www.ncbi.nlm.nih.gov/pubmed/24052071
http://dx.doi.org/10.1038/ncomms3372

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