Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO(2)-Based RRAM

Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is promising in novel memory and logic device applications. Understanding the physics of RS and the nature of CF is of utmost importance to control the performance, variability and reliability of resistive switch...

Descripción completa

Detalles Bibliográficos
Autores principales: Long, Shibing, Perniola, Luca, Cagli, Carlo, Buckley, Julien, Lian, Xiaojuan, Miranda, Enrique, Pan, Feng, Liu, Ming, Suñé, Jordi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3796310/
https://www.ncbi.nlm.nih.gov/pubmed/24121547
http://dx.doi.org/10.1038/srep02929

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3796310/
https://www.ncbi.nlm.nih.gov/pubmed/24121547
http://dx.doi.org/10.1038/srep02929

Ejemplares similares