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The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response...

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Autores principales: Cui, Haoyang, Xu, Yongpeng, Yang, Junjie, Tang, Naiyun, Tang, Zhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Hindawi Publishing Corporation 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3806429/
https://www.ncbi.nlm.nih.gov/pubmed/24194676
http://dx.doi.org/10.1155/2013/213091
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author Cui, Haoyang
Xu, Yongpeng
Yang, Junjie
Tang, Naiyun
Tang, Zhong
author_facet Cui, Haoyang
Xu, Yongpeng
Yang, Junjie
Tang, Naiyun
Tang, Zhong
author_sort Cui, Haoyang
collection PubMed
description The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction.
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spelling pubmed-38064292013-11-05 The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector Cui, Haoyang Xu, Yongpeng Yang, Junjie Tang, Naiyun Tang, Zhong ScientificWorldJournal Research Article The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction. Hindawi Publishing Corporation 2013-09-30 /pmc/articles/PMC3806429/ /pubmed/24194676 http://dx.doi.org/10.1155/2013/213091 Text en Copyright © 2013 Haoyang Cui et al. https://creativecommons.org/licenses/by/3.0/ This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Article
Cui, Haoyang
Xu, Yongpeng
Yang, Junjie
Tang, Naiyun
Tang, Zhong
The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector
title The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector
title_full The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector
title_fullStr The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector
title_full_unstemmed The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector
title_short The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector
title_sort effect of metal-semiconductor contact on the transient photovoltaic characteristic of hgcdte pv detector
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3806429/
https://www.ncbi.nlm.nih.gov/pubmed/24194676
http://dx.doi.org/10.1155/2013/213091
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