Cargando…

Routes to rupture and folding of graphene on rough 6H-SiC(0001) and their identification

Twisted few layer graphene (FLG) is highly attractive from an application point of view, due to its extraordinary electronic properties. In order to study its properties, we demonstrate and discuss three different routes to in situ create and identify (twisted) FLG. Single layer graphene (SLG) sheet...

Descripción completa

Detalles Bibliográficos
Autores principales:	Temmen, M, Ochedowski, O, Bussmann, B Kleine, Schleberger, M, Reichling, M, Bollmann, T R J
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Beilstein-Institut 2013
Materias:	Full Research Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3817683/ https://www.ncbi.nlm.nih.gov/pubmed/24205456 http://dx.doi.org/10.3762/bjnano.4.69

Ejemplares similares

Graphene on Mica - Intercalated Water Trapped for Life
por: Ochedowski, O., et al.
Publicado: (2014)

Quantitative multichannel NC-AFM data analysis of graphene growth on SiC(0001)
por: Held, Christian, et al.
Publicado: (2012)

Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature
por: Telychko, Mykola, et al.
Publicado: (2015)

Effect of contaminations and surface preparation on the work function of single layer MoS(2)
por: Ochedowski, Oliver, et al.
Publicado: (2014)

High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001)
por: Hajlaoui, Mahdi, et al.
Publicado: (2016)

Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction
por: Razado-Colambo, I., et al.
Publicado: (2018)

Effect of hydrogen passivation on the decoupling of graphene on SiC(0001) substrate: First-principles calculations
por: Liu, Kang, et al.
Publicado: (2017)

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)
por: Vecchio, Carmelo, et al.
Publicado: (2011)

Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001)
por: Li, Lianbi, et al.
Publicado: (2017)

From the Au nano-clusters to the nanoparticles on 4H-SiC (0001)
por: Li, Ming-Yu, et al.
Publicado: (2015)

Selective Fabrication of Bismuthene and α-Bi on Hydrogen-Terminated SiC(0001)
por: Yaegashi, Ken, et al.
Publicado: (2022)

Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer
por: Pierucci, Debora, et al.
Publicado: (2016)

Corrigendum: From the Au nano-clusters to the nanoparticles on 4H-SiC (0001)
por: Li, Ming-Yu, et al.
Publicado: (2016)

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen
por: Pallecchi, E., et al.
Publicado: (2014)

αSiC - βSiC - graphene composites
por: Razmjoo, Ali, et al.
Publicado: (2023)

Nature of the Insulating Ground State of the Two-Dimensional Sn Atom Lattice on SiC(0001)
por: Yi, Seho, et al.
Publicado: (2016)

Graphite, graphene on SiC, and graphene nanoribbons: Calculated images with a numerical FM-AFM
por: Castanié, Fabien, et al.
Publicado: (2012)

Noise in NC-AFM measurements with significant tip–sample interaction
por: Lübbe, Jannis, et al.
Publicado: (2016)

Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface
por: Lewandków, Rafał, et al.
Publicado: (2021)

Understanding interferometry for micro-cantilever displacement detection
por: von Schmidsfeld, Alexander, et al.
Publicado: (2016)

Determining cantilever stiffness from thermal noise
por: Lübbe, Jannis, et al.
Publicado: (2013)

Intercalation of Au Atoms into SiC(0001)/Buffer Interfaces–A First-Principles Density Functional Theory Study
por: Bayani, Amirhossein, et al.
Publicado: (2020)

Thermal noise limit for ultra-high vacuum noncontact atomic force microscopy
por: Lübbe, Jannis, et al.
Publicado: (2013)

Density functional theory calculations on graphene/α-SiO(2)(0001) interface
por: Ao, Zhimin, et al.
Publicado: (2012)

Formation of SiC nanoparticles in an atmospheric microwave plasma
por: Vennekamp, Martin, et al.
Publicado: (2011)

Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001)
por: Deng, Hui, et al.
Publicado: (2015)

Enhanced Phase Transition Properties of VO(2) Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition
por: Cheng, Xiankun, et al.
Publicado: (2019)

SiC surface orientation and Si loss rate effects on epitaxial graphene
por: Kim, Moonkyung, et al.
Publicado: (2012)

Intermolecular vs molecule–substrate interactions: A combined STM and theoretical study of supramolecular phases on graphene/Ru(0001)
por: Roos, Michael, et al.
Publicado: (2011)

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals
por: Shtepliuk, Ivan, et al.
Publicado: (2016)

An efficient Terahertz rectifier on the graphene/SiC materials platform
por: Schlecht, Maria T., et al.
Publicado: (2019)

Preparation and Properties of Layered SiC-Graphene Composites for EDM
por: Hanzel, Ondrej, et al.
Publicado: (2021)

High-temperature resistive gas sensors based on ZnO/SiC nanocomposites
por: Platonov, Vadim B, et al.
Publicado: (2019)

Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers
por: Hu, Jichao, et al.
Publicado: (2016)

Strong Coupling of Folded Phonons with Plasmons in 6H-SiC Micro/Nanocrystals
por: Huang, Yao, et al.
Publicado: (2018)

Effects of Transition Element Additions on the Interfacial Interaction and Electronic Structure of Al(111)/6H-SiC(0001) Interface: A First-Principles Study
por: Wang, Changqing, et al.
Publicado: (2021)

ZnO-decorated SiC@C hybrids with strong electromagnetic absorption
por: Duan, Liqun, et al.
Publicado: (2023)

Controllable growth of vertically aligned graphene on C-face SiC
por: Liu, Yu, et al.
Publicado: (2016)

Graphene on SiC Substrate as Biosensor: Theoretical Background, Preparation, and Characterization
por: Lebedev, Alexander A., et al.
Publicado: (2021)

Induced growth of quasi-free-standing graphene on SiC substrates
por: Liu, Zhenxing, et al.
Publicado: (2019)

Cannot write session to /tmp/vufind_sessions/sess_e90p5r2qso5m4av0abbsua1g81