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A Linearization Time-Domain CMOS Smart Temperature Sensor Using a Curvature Compensation Oscillator

This paper presents an area-efficient time-domain CMOS smart temperature sensor using a curvature compensation oscillator for linearity enhancement with a −40 to 120 °C temperature range operability. The inverter-based smart temperature sensors can substantially reduce the cost and circuit complexit...

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Detalles Bibliográficos
Autores principales: Chen, Chun-Chi, Chen, Hao-Wen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3821319/
https://www.ncbi.nlm.nih.gov/pubmed/23989825
http://dx.doi.org/10.3390/s130911439
Descripción
Sumario:This paper presents an area-efficient time-domain CMOS smart temperature sensor using a curvature compensation oscillator for linearity enhancement with a −40 to 120 °C temperature range operability. The inverter-based smart temperature sensors can substantially reduce the cost and circuit complexity of integrated temperature sensors. However, a large curvature exists on the temperature-to-time transfer curve of the inverter-based delay line and results in poor linearity of the sensor output. For cost reduction and error improvement, a temperature-to-pulse generator composed of a ring oscillator and a time amplifier was used to generate a thermal sensing pulse with a sufficient width proportional to the absolute temperature (PTAT). Then, a simple but effective on-chip curvature compensation oscillator is proposed to simultaneously count and compensate the PTAT pulse with curvature for linearization. With such a simple structure, the proposed sensor possesses an extremely small area of 0.07 mm(2) in a TSMC 0.35-μm CMOS 2P4M digital process. By using an oscillator-based scheme design, the proposed sensor achieves a fine resolution of 0.045 °C without significantly increasing the circuit area. With the curvature compensation, the inaccuracy of −1.2 to 0.2 °C is achieved in an operation range of −40 to 120 °C after two-point calibration for 14 packaged chips. The power consumption is measured as 23 μW at a sample rate of 10 samples/s.