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NO and NO(2) Sensing Properties of WO(3) and Co(3)O(4) Based Gas Sensors

Semiconductor-based gas sensors that use n-type WO(3) or p-type Co(3)O(4) powder were fabricated and their gas sensing properties toward NO(2) or NO (0.5–5 ppm in air) were investigated at 100 °C or 200 °C. The resistance of the WO(3)-based sensor increased on exposure to NO(2) and NO. On the other...

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Detalles Bibliográficos
Autores principales:	Akamatsu, Takafumi, Itoh, Toshio, Izu, Noriya, Shin, Woosuck
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2013
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3821332/ https://www.ncbi.nlm.nih.gov/pubmed/24048338 http://dx.doi.org/10.3390/s130912467

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