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Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type and 10% in p-type degenerate Si bands, using a narrow Schottky...

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Detalles Bibliográficos
Autores principales: Dankert, André, Dulal, Ravi S., Dash, Saroj P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3824168/
https://www.ncbi.nlm.nih.gov/pubmed/24217343
http://dx.doi.org/10.1038/srep03196