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Efficient Spin Injection into Silicon and the Role of the Schottky Barrier
Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type and 10% in p-type degenerate Si bands, using a narrow Schottky...
Autores principales: | Dankert, André, Dulal, Ravi S., Dash, Saroj P. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3824168/ https://www.ncbi.nlm.nih.gov/pubmed/24217343 http://dx.doi.org/10.1038/srep03196 |
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