Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres

Light-emitting diodes (LEDs) become an attractive alternative to conventional light sources due to high efficiency and long lifetime. However, different material properties between GaN and sapphire cause several problems such as high defect density in GaN, serious wafer bowing, particularly in large...

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Detalles Bibliográficos
Autores principales: Kim, Jonghak, Woo, Heeje, Joo, Kisu, Tae, Sungwon, Park, Jinsub, Moon, Daeyoung, Park, Sung Hyun, Jang, Junghwan, Cho, Yigil, Park, Jucheol, Yuh, Hwankuk, Lee, Gun-Do, Choi, In-Suk, Nanishi, Yasushi, Han, Heung Nam, Char, Kookheon, Yoon, Euijoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3826094/
https://www.ncbi.nlm.nih.gov/pubmed/24220259
http://dx.doi.org/10.1038/srep03201

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