Current–Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope

[Image: see text] Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current–voltage properties. We report accurate on-top imaging and I–V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no n...

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Autores principales: Timm, Rainer, Persson, Olof, Engberg, David L. J., Fian, Alexander, Webb, James L., Wallentin, Jesper, Jönsson, Andreas, Borgström, Magnus T., Samuelson, Lars, Mikkelsen, Anders
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2013
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3834301/
https://www.ncbi.nlm.nih.gov/pubmed/24059470
http://dx.doi.org/10.1021/nl402570u
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author Timm, Rainer
Persson, Olof
Engberg, David L. J.
Fian, Alexander
Webb, James L.
Wallentin, Jesper
Jönsson, Andreas
Borgström, Magnus T.
Samuelson, Lars
Mikkelsen, Anders
author_facet Timm, Rainer
Persson, Olof
Engberg, David L. J.
Fian, Alexander
Webb, James L.
Wallentin, Jesper
Jönsson, Andreas
Borgström, Magnus T.
Samuelson, Lars
Mikkelsen, Anders
author_sort Timm, Rainer
collection PubMed
description [Image: see text] Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current–voltage properties. We report accurate on-top imaging and I–V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I–V properties with a very small spread in measured values compared to standard techniques.
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spelling pubmed-38343012013-11-22 Current–Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope Timm, Rainer Persson, Olof Engberg, David L. J. Fian, Alexander Webb, James L. Wallentin, Jesper Jönsson, Andreas Borgström, Magnus T. Samuelson, Lars Mikkelsen, Anders Nano Lett [Image: see text] Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current–voltage properties. We report accurate on-top imaging and I–V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I–V properties with a very small spread in measured values compared to standard techniques. American Chemical Society 2013-09-23 2013-11-13 /pmc/articles/PMC3834301/ /pubmed/24059470 http://dx.doi.org/10.1021/nl402570u Text en Copyright © 2013 American Chemical Society Terms of Use (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html)
spellingShingle Timm, Rainer
Persson, Olof
Engberg, David L. J.
Fian, Alexander
Webb, James L.
Wallentin, Jesper
Jönsson, Andreas
Borgström, Magnus T.
Samuelson, Lars
Mikkelsen, Anders
Current–Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope
title Current–Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope
title_full Current–Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope
title_fullStr Current–Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope
title_full_unstemmed Current–Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope
title_short Current–Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope
title_sort current–voltage characterization of individual as-grown nanowires using a scanning tunneling microscope
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3834301/
https://www.ncbi.nlm.nih.gov/pubmed/24059470
http://dx.doi.org/10.1021/nl402570u
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