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Molecular memory with atomically smooth graphene contacts
We report the use of bilayer graphene as an atomically smooth contact for nanoscale devices. A two-terminal bucky-ball (C(60)) based molecular memory is fabricated with bilayer graphene as a contact on the polycrystalline nickel electrode. Graphene provides an atomically smooth covering over an othe...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3835392/ https://www.ncbi.nlm.nih.gov/pubmed/24225345 http://dx.doi.org/10.1186/1556-276X-8-476 |
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author | Umair, Ahmad Raza, Tehseen Z Raza, Hassan |
author_facet | Umair, Ahmad Raza, Tehseen Z Raza, Hassan |
author_sort | Umair, Ahmad |
collection | PubMed |
description | We report the use of bilayer graphene as an atomically smooth contact for nanoscale devices. A two-terminal bucky-ball (C(60)) based molecular memory is fabricated with bilayer graphene as a contact on the polycrystalline nickel electrode. Graphene provides an atomically smooth covering over an otherwise rough metal surface. The use of graphene additionally prohibits the electromigration of nickel into the C(60) layer. The devices exhibit a low-resistance state in the first sweep cycle and irreversibly switch to a high-resistance state at 0.8 to 1.2 V bias. In the subsequent cycles, the devices retain the high-resistance state, thus making it write-once read-many memory. |
format | Online Article Text |
id | pubmed-3835392 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2013 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-38353922013-11-21 Molecular memory with atomically smooth graphene contacts Umair, Ahmad Raza, Tehseen Z Raza, Hassan Nanoscale Res Lett Nano Express We report the use of bilayer graphene as an atomically smooth contact for nanoscale devices. A two-terminal bucky-ball (C(60)) based molecular memory is fabricated with bilayer graphene as a contact on the polycrystalline nickel electrode. Graphene provides an atomically smooth covering over an otherwise rough metal surface. The use of graphene additionally prohibits the electromigration of nickel into the C(60) layer. The devices exhibit a low-resistance state in the first sweep cycle and irreversibly switch to a high-resistance state at 0.8 to 1.2 V bias. In the subsequent cycles, the devices retain the high-resistance state, thus making it write-once read-many memory. Springer 2013-11-14 /pmc/articles/PMC3835392/ /pubmed/24225345 http://dx.doi.org/10.1186/1556-276X-8-476 Text en Copyright © 2013 Umair et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Umair, Ahmad Raza, Tehseen Z Raza, Hassan Molecular memory with atomically smooth graphene contacts |
title | Molecular memory with atomically smooth graphene contacts |
title_full | Molecular memory with atomically smooth graphene contacts |
title_fullStr | Molecular memory with atomically smooth graphene contacts |
title_full_unstemmed | Molecular memory with atomically smooth graphene contacts |
title_short | Molecular memory with atomically smooth graphene contacts |
title_sort | molecular memory with atomically smooth graphene contacts |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3835392/ https://www.ncbi.nlm.nih.gov/pubmed/24225345 http://dx.doi.org/10.1186/1556-276X-8-476 |
work_keys_str_mv | AT umairahmad molecularmemorywithatomicallysmoothgraphenecontacts AT razatehseenz molecularmemorywithatomicallysmoothgraphenecontacts AT razahassan molecularmemorywithatomicallysmoothgraphenecontacts |