Modeling of Photoinduced Deformation in Silicon Microcantilevers

A model for prediction the photostriction effect in silicon microcantilevers is built up based on the fundamentals of mechanics and semiconductor physics. By considering the spatial distribution and surface recombination of photoinduced carriers in silicon, the model interprets the cause of the phot...

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Detalles Bibliográficos
Autores principales: Guo, Yu-Lin, Zhou, Jia, Huang, Yiping, Bao, Min Hang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2007
Materias:
Full Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3841841/
https://www.ncbi.nlm.nih.gov/pubmed/28903192
Descripción
Sumario:A model for prediction the photostriction effect in silicon microcantilevers is built up based on the fundamentals of mechanics and semiconductor physics. By considering the spatial distribution and surface recombination of photoinduced carriers in silicon, the model interprets the cause of the photoinduced bending. The results from our model much more closely approximate the experimental values than the former model built up by Datskos, Rajic and Datskou [1](APL, Vol.73 (1998) No.16, pp 3219-2321), represented by the reduction of the error between calculation and measurement from 25 times to 0.85 times.

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