Modeling of Photoinduced Deformation in Silicon Microcantilevers

A model for prediction the photostriction effect in silicon microcantilevers is built up based on the fundamentals of mechanics and semiconductor physics. By considering the spatial distribution and surface recombination of photoinduced carriers in silicon, the model interprets the cause of the phot...

Descripción completa

Detalles Bibliográficos
Autores principales: Guo, Yu-Lin, Zhou, Jia, Huang, Yiping, Bao, Min Hang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2007
Materias:
Full Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3841841/
https://www.ncbi.nlm.nih.gov/pubmed/28903192
_version_ 1782292851758989312
author Guo, Yu-Lin
Zhou, Jia
Huang, Yiping
Bao, Min Hang
author_facet Guo, Yu-Lin
Zhou, Jia
Huang, Yiping
Bao, Min Hang
author_sort Guo, Yu-Lin
collection PubMed
description A model for prediction the photostriction effect in silicon microcantilevers is built up based on the fundamentals of mechanics and semiconductor physics. By considering the spatial distribution and surface recombination of photoinduced carriers in silicon, the model interprets the cause of the photoinduced bending. The results from our model much more closely approximate the experimental values than the former model built up by Datskos, Rajic and Datskou [1](APL, Vol.73 (1998) No.16, pp 3219-2321), represented by the reduction of the error between calculation and measurement from 25 times to 0.85 times.
format Online
Article
Text
id pubmed-3841841
institution National Center for Biotechnology Information
language English
publishDate 2007
publisher Molecular Diversity Preservation International (MDPI)
record_format MEDLINE/PubMed
spelling pubmed-38418412013-11-27 Modeling of Photoinduced Deformation in Silicon Microcantilevers Guo, Yu-Lin Zhou, Jia Huang, Yiping Bao, Min Hang Sensors (Basel) Full Paper A model for prediction the photostriction effect in silicon microcantilevers is built up based on the fundamentals of mechanics and semiconductor physics. By considering the spatial distribution and surface recombination of photoinduced carriers in silicon, the model interprets the cause of the photoinduced bending. The results from our model much more closely approximate the experimental values than the former model built up by Datskos, Rajic and Datskou [1](APL, Vol.73 (1998) No.16, pp 3219-2321), represented by the reduction of the error between calculation and measurement from 25 times to 0.85 times. Molecular Diversity Preservation International (MDPI) 2007-09-03 /pmc/articles/PMC3841841/ /pubmed/28903192 Text en © 2007 by MDPI (http://www.mdpi.org). Reproduction is permitted for noncommercial purposes.
spellingShingle Full Paper
Guo, Yu-Lin
Zhou, Jia
Huang, Yiping
Bao, Min Hang
Modeling of Photoinduced Deformation in Silicon Microcantilevers
title Modeling of Photoinduced Deformation in Silicon Microcantilevers
title_full Modeling of Photoinduced Deformation in Silicon Microcantilevers
title_fullStr Modeling of Photoinduced Deformation in Silicon Microcantilevers
title_full_unstemmed Modeling of Photoinduced Deformation in Silicon Microcantilevers
title_short Modeling of Photoinduced Deformation in Silicon Microcantilevers
title_sort modeling of photoinduced deformation in silicon microcantilevers
topic Full Paper
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3841841/
https://www.ncbi.nlm.nih.gov/pubmed/28903192
work_keys_str_mv AT guoyulin modelingofphotoinduceddeformationinsiliconmicrocantilevers
AT zhoujia modelingofphotoinduceddeformationinsiliconmicrocantilevers
AT huangyiping modelingofphotoinduceddeformationinsiliconmicrocantilevers
AT baominhang modelingofphotoinduceddeformationinsiliconmicrocantilevers

Ejemplares similares