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First-principles theoretical study of hydrolysis of stepped and kinked Ga-terminated GaN surfaces
We have investigated the initial stage of hydrolysis process of Ga-terminated GaN surfaces by using first-principles theoretical calculations. We found that the activation barrier of H(2)O dissociation at the kinked site of the Ga-terminated GaN surface is about 0.8 eV, which is significantly lower...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3848174/ https://www.ncbi.nlm.nih.gov/pubmed/23679914 http://dx.doi.org/10.1186/1556-276X-8-232 |