Cargando…

Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching

Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching. Under optimum conditions, the formation of deep straight holes with an ordered periodicit...

Descripción completa

Detalles Bibliográficos
Autores principales: Asoh, Hidetaka, Fujihara, Kousuke, Ono, Sachiko
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3852592/
https://www.ncbi.nlm.nih.gov/pubmed/24090268
http://dx.doi.org/10.1186/1556-276X-8-410
_version_ 1782478693220745216
author Asoh, Hidetaka
Fujihara, Kousuke
Ono, Sachiko
author_facet Asoh, Hidetaka
Fujihara, Kousuke
Ono, Sachiko
author_sort Asoh, Hidetaka
collection PubMed
description Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching. Under optimum conditions, the formation of deep straight holes with an ordered periodicity (e.g., 100 nm interval, 40 nm diameter, and high aspect ratio of 50) was successfully achieved. By using the present method, the fabrication of silicon nanohole arrays with 60-nm periodicity was also achieved.
format Online
Article
Text
id pubmed-3852592
institution National Center for Biotechnology Information
language English
publishDate 2013
publisher Springer
record_format MEDLINE/PubMed
spelling pubmed-38525922013-12-06 Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching Asoh, Hidetaka Fujihara, Kousuke Ono, Sachiko Nanoscale Res Lett Nano Express Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching. Under optimum conditions, the formation of deep straight holes with an ordered periodicity (e.g., 100 nm interval, 40 nm diameter, and high aspect ratio of 50) was successfully achieved. By using the present method, the fabrication of silicon nanohole arrays with 60-nm periodicity was also achieved. Springer 2013-10-04 /pmc/articles/PMC3852592/ /pubmed/24090268 http://dx.doi.org/10.1186/1556-276X-8-410 Text en Copyright © 2013 Asoh et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Asoh, Hidetaka
Fujihara, Kousuke
Ono, Sachiko
Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching
title Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching
title_full Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching
title_fullStr Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching
title_full_unstemmed Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching
title_short Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching
title_sort sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3852592/
https://www.ncbi.nlm.nih.gov/pubmed/24090268
http://dx.doi.org/10.1186/1556-276X-8-410
work_keys_str_mv AT asohhidetaka sub100nmorderedsiliconholearraysbymetalassistedchemicaletching
AT fujiharakousuke sub100nmorderedsiliconholearraysbymetalassistedchemicaletching
AT onosachiko sub100nmorderedsiliconholearraysbymetalassistedchemicaletching