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Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3853228/ https://www.ncbi.nlm.nih.gov/pubmed/24229327 http://dx.doi.org/10.1186/1556-276X-8-419 |
| _version_ | 1782478802168840192 |
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| author | Prakash, Amit Maikap, Siddheswar Chiu, Hsien-Chin Tien, Ta-Chang Lai, Chao-Sung |
| author_facet | Prakash, Amit Maikap, Siddheswar Chiu, Hsien-Chin Tien, Ta-Chang Lai, Chao-Sung |
| author_sort | Prakash, Amit |
| collection | PubMed |
| description | |
| format | Online Article Text |
| id | pubmed-3853228 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2013 |
| publisher | Springer |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-38532282013-12-11 Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface Prakash, Amit Maikap, Siddheswar Chiu, Hsien-Chin Tien, Ta-Chang Lai, Chao-Sung Nanoscale Res Lett Retraction Springer 2013-10-22 /pmc/articles/PMC3853228/ /pubmed/24229327 http://dx.doi.org/10.1186/1556-276X-8-419 Text en Copyright © 2013 Prakash et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
| spellingShingle | Retraction Prakash, Amit Maikap, Siddheswar Chiu, Hsien-Chin Tien, Ta-Chang Lai, Chao-Sung Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface |
| title | Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface |
| title_full | Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface |
| title_fullStr | Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface |
| title_full_unstemmed | Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface |
| title_short | Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface |
| title_sort | retraction: enhanced resistive switching memory characteristics and mechanism using a ti nanolayer at the w/taox interface |
| topic | Retraction |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3853228/ https://www.ncbi.nlm.nih.gov/pubmed/24229327 http://dx.doi.org/10.1186/1556-276X-8-419 |
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