Role of domain walls in the abnormal photovoltaic effect in BiFeO(3)

Recently, the anomalous photovoltaic (PV) effect in BiFeO(3) (BFO) thin films, which resulted in open circuit voltages (V(oc)) considerably larger than the band gap of the material, has generated a revival of the entire field of photoferroelectrics. Here, via temperature-dependent PV studies, we prove that the bulk photovoltaic (BPV) effect, which has been studied in the past for many non-centrosymmetric materials, is at the origin of the anomalous PV effect in BFO films. Moreover, we show that irrespective of the measurement geometry, V(oc) as high as 50 V can be achieved by controlling the conductivity of domain walls (DW). We also show that photoconductivity of the DW is markedly higher than in the bulk of BFO.