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Role of domain walls in the abnormal photovoltaic effect in BiFeO(3)

Recently, the anomalous photovoltaic (PV) effect in BiFeO(3) (BFO) thin films, which resulted in open circuit voltages (V(oc)) considerably larger than the band gap of the material, has generated a revival of the entire field of photoferroelectrics. Here, via temperature-dependent PV studies, we pro...

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Autores principales: Bhatnagar, Akash, Roy Chaudhuri, Ayan, Heon Kim, Young, Hesse, Dietrich, Alexe, Marin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3868332/
http://dx.doi.org/10.1038/ncomms3835
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author Bhatnagar, Akash
Roy Chaudhuri, Ayan
Heon Kim, Young
Hesse, Dietrich
Alexe, Marin
author_facet Bhatnagar, Akash
Roy Chaudhuri, Ayan
Heon Kim, Young
Hesse, Dietrich
Alexe, Marin
author_sort Bhatnagar, Akash
collection PubMed
description Recently, the anomalous photovoltaic (PV) effect in BiFeO(3) (BFO) thin films, which resulted in open circuit voltages (V(oc)) considerably larger than the band gap of the material, has generated a revival of the entire field of photoferroelectrics. Here, via temperature-dependent PV studies, we prove that the bulk photovoltaic (BPV) effect, which has been studied in the past for many non-centrosymmetric materials, is at the origin of the anomalous PV effect in BFO films. Moreover, we show that irrespective of the measurement geometry, V(oc) as high as 50 V can be achieved by controlling the conductivity of domain walls (DW). We also show that photoconductivity of the DW is markedly higher than in the bulk of BFO.
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spelling pubmed-38683322013-12-20 Role of domain walls in the abnormal photovoltaic effect in BiFeO(3) Bhatnagar, Akash Roy Chaudhuri, Ayan Heon Kim, Young Hesse, Dietrich Alexe, Marin Nat Commun Article Recently, the anomalous photovoltaic (PV) effect in BiFeO(3) (BFO) thin films, which resulted in open circuit voltages (V(oc)) considerably larger than the band gap of the material, has generated a revival of the entire field of photoferroelectrics. Here, via temperature-dependent PV studies, we prove that the bulk photovoltaic (BPV) effect, which has been studied in the past for many non-centrosymmetric materials, is at the origin of the anomalous PV effect in BFO films. Moreover, we show that irrespective of the measurement geometry, V(oc) as high as 50 V can be achieved by controlling the conductivity of domain walls (DW). We also show that photoconductivity of the DW is markedly higher than in the bulk of BFO. Nature Pub. Group 2013-11-27 /pmc/articles/PMC3868332/ http://dx.doi.org/10.1038/ncomms3835 Text en Copyright © 2013, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by-nc-nd/3.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/
spellingShingle Article
Bhatnagar, Akash
Roy Chaudhuri, Ayan
Heon Kim, Young
Hesse, Dietrich
Alexe, Marin
Role of domain walls in the abnormal photovoltaic effect in BiFeO(3)
title Role of domain walls in the abnormal photovoltaic effect in BiFeO(3)
title_full Role of domain walls in the abnormal photovoltaic effect in BiFeO(3)
title_fullStr Role of domain walls in the abnormal photovoltaic effect in BiFeO(3)
title_full_unstemmed Role of domain walls in the abnormal photovoltaic effect in BiFeO(3)
title_short Role of domain walls in the abnormal photovoltaic effect in BiFeO(3)
title_sort role of domain walls in the abnormal photovoltaic effect in bifeo(3)
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3868332/
http://dx.doi.org/10.1038/ncomms3835
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