STM tip-assisted engineering of molecular nanostructures: PTCDA islands on Ge(001):H surfaces

Islands composed of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) molecules are grown on a hydrogen passivated Ge(001):H surface. The islands are studied with room temperature scanning tunneling microscopy and spectroscopy. The spontaneous and tip-induced formation of the top-most layer of t...

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Autores principales: Ahmad Zebari, Amir A, Kolmer, Marek, Prauzner-Bechcicki, Jakub S
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2013
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3869338/
https://www.ncbi.nlm.nih.gov/pubmed/24367762
http://dx.doi.org/10.3762/bjnano.4.104
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author Ahmad Zebari, Amir A
Kolmer, Marek
Prauzner-Bechcicki, Jakub S
author_facet Ahmad Zebari, Amir A
Kolmer, Marek
Prauzner-Bechcicki, Jakub S
author_sort Ahmad Zebari, Amir A
collection PubMed
description Islands composed of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) molecules are grown on a hydrogen passivated Ge(001):H surface. The islands are studied with room temperature scanning tunneling microscopy and spectroscopy. The spontaneous and tip-induced formation of the top-most layer of the island is presented. Assistance of the scanning probe seems to be one of the factors that facilitate and speed the process of formation of the top-most layer.
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spelling pubmed-38693382013-12-23 STM tip-assisted engineering of molecular nanostructures: PTCDA islands on Ge(001):H surfaces Ahmad Zebari, Amir A Kolmer, Marek Prauzner-Bechcicki, Jakub S Beilstein J Nanotechnol Full Research Paper Islands composed of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) molecules are grown on a hydrogen passivated Ge(001):H surface. The islands are studied with room temperature scanning tunneling microscopy and spectroscopy. The spontaneous and tip-induced formation of the top-most layer of the island is presented. Assistance of the scanning probe seems to be one of the factors that facilitate and speed the process of formation of the top-most layer. Beilstein-Institut 2013-12-18 /pmc/articles/PMC3869338/ /pubmed/24367762 http://dx.doi.org/10.3762/bjnano.4.104 Text en Copyright © 2013, Ahmad Zebari et al. https://creativecommons.org/licenses/by/2.0https://www.beilstein-journals.org/bjnano/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms)
spellingShingle Full Research Paper
Ahmad Zebari, Amir A
Kolmer, Marek
Prauzner-Bechcicki, Jakub S
STM tip-assisted engineering of molecular nanostructures: PTCDA islands on Ge(001):H surfaces
title STM tip-assisted engineering of molecular nanostructures: PTCDA islands on Ge(001):H surfaces
title_full STM tip-assisted engineering of molecular nanostructures: PTCDA islands on Ge(001):H surfaces
title_fullStr STM tip-assisted engineering of molecular nanostructures: PTCDA islands on Ge(001):H surfaces
title_full_unstemmed STM tip-assisted engineering of molecular nanostructures: PTCDA islands on Ge(001):H surfaces
title_short STM tip-assisted engineering of molecular nanostructures: PTCDA islands on Ge(001):H surfaces
title_sort stm tip-assisted engineering of molecular nanostructures: ptcda islands on ge(001):h surfaces
topic Full Research Paper
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3869338/
https://www.ncbi.nlm.nih.gov/pubmed/24367762
http://dx.doi.org/10.3762/bjnano.4.104
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