Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry

GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal an...

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Detalles Bibliográficos
Autores principales: Förster, Arno, Stock, Jürgen, Montanari, Simone, Lepsa, Mihail Ion, Lüth, Hans
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2006
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3872355/
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author Förster, Arno
Stock, Jürgen
Montanari, Simone
Lepsa, Mihail Ion
Lüth, Hans
author_facet Förster, Arno
Stock, Jürgen
Montanari, Simone
Lepsa, Mihail Ion
Lüth, Hans
author_sort Förster, Arno
collection PubMed
description GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.
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spelling pubmed-38723552013-12-26 Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry Förster, Arno Stock, Jürgen Montanari, Simone Lepsa, Mihail Ion Lüth, Hans Sensors (Basel) Full Research Paper GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW. Molecular Diversity Preservation International (MDPI) 2006-04-07 /pmc/articles/PMC3872355/ Text en © 2006 by MDPI (http://www.mdpi.org). Reproduction is permitted for non-commercial purposes.
spellingShingle Full Research Paper
Förster, Arno
Stock, Jürgen
Montanari, Simone
Lepsa, Mihail Ion
Lüth, Hans
Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry
title Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry
title_full Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry
title_fullStr Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry
title_full_unstemmed Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry
title_short Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry
title_sort fabrication and characterisation of gaas gunn diode chips for applications at 77 ghz in automotive industry
topic Full Research Paper
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3872355/
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