Space electric field concentrated effect for Zr:SiO(2) RRAM devices using porous SiO(2) buffer layer

To improve the operation current lowing of the Zr:SiO(2) RRAM devices, a space electric field concentrated effect established by the porous SiO(2) buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HR...

Descripción completa

Detalles Bibliográficos
Autores principales: Chang, Kuan-Chang, Huang, Jen-wei, Chang, Ting-Chang, Tsai, Tsung-Ming, Chen, Kai-Huang, Young, Tai-Fa, Chen, Jung-Hui, Zhang, Rui, Lou, Jen-Chung, Huang, Syuan-Yong, Pan, Yin-Chih, Huang, Hui-Chun, Syu, Yong-En, Gan, Der-Shin, Bao, Ding-Hua, Sze, Simon M
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3881491/
https://www.ncbi.nlm.nih.gov/pubmed/24330524
http://dx.doi.org/10.1186/1556-276X-8-523
_version_ 1782298223080112128
author Chang, Kuan-Chang
Huang, Jen-wei
Chang, Ting-Chang
Tsai, Tsung-Ming
Chen, Kai-Huang
Young, Tai-Fa
Chen, Jung-Hui
Zhang, Rui
Lou, Jen-Chung
Huang, Syuan-Yong
Pan, Yin-Chih
Huang, Hui-Chun
Syu, Yong-En
Gan, Der-Shin
Bao, Ding-Hua
Sze, Simon M
author_facet Chang, Kuan-Chang
Huang, Jen-wei
Chang, Ting-Chang
Tsai, Tsung-Ming
Chen, Kai-Huang
Young, Tai-Fa
Chen, Jung-Hui
Zhang, Rui
Lou, Jen-Chung
Huang, Syuan-Yong
Pan, Yin-Chih
Huang, Hui-Chun
Syu, Yong-En
Gan, Der-Shin
Bao, Ding-Hua
Sze, Simon M
author_sort Chang, Kuan-Chang
collection PubMed
description To improve the operation current lowing of the Zr:SiO(2) RRAM devices, a space electric field concentrated effect established by the porous SiO(2) buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO(2) and bilayer Zr:SiO(2)/porous SiO(2) thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO(2)/porous SiO(2) thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO(2)/porous SiO(2) RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model.
format Online
Article
Text
id pubmed-3881491
institution National Center for Biotechnology Information
language English
publishDate 2013
publisher Springer
record_format MEDLINE/PubMed
spelling pubmed-38814912014-01-07 Space electric field concentrated effect for Zr:SiO(2) RRAM devices using porous SiO(2) buffer layer Chang, Kuan-Chang Huang, Jen-wei Chang, Ting-Chang Tsai, Tsung-Ming Chen, Kai-Huang Young, Tai-Fa Chen, Jung-Hui Zhang, Rui Lou, Jen-Chung Huang, Syuan-Yong Pan, Yin-Chih Huang, Hui-Chun Syu, Yong-En Gan, Der-Shin Bao, Ding-Hua Sze, Simon M Nanoscale Res Lett Nano Express To improve the operation current lowing of the Zr:SiO(2) RRAM devices, a space electric field concentrated effect established by the porous SiO(2) buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO(2) and bilayer Zr:SiO(2)/porous SiO(2) thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO(2)/porous SiO(2) thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO(2)/porous SiO(2) RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model. Springer 2013-12-11 /pmc/articles/PMC3881491/ /pubmed/24330524 http://dx.doi.org/10.1186/1556-276X-8-523 Text en Copyright © 2013 Chang et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Chang, Kuan-Chang
Huang, Jen-wei
Chang, Ting-Chang
Tsai, Tsung-Ming
Chen, Kai-Huang
Young, Tai-Fa
Chen, Jung-Hui
Zhang, Rui
Lou, Jen-Chung
Huang, Syuan-Yong
Pan, Yin-Chih
Huang, Hui-Chun
Syu, Yong-En
Gan, Der-Shin
Bao, Ding-Hua
Sze, Simon M
Space electric field concentrated effect for Zr:SiO(2) RRAM devices using porous SiO(2) buffer layer
title Space electric field concentrated effect for Zr:SiO(2) RRAM devices using porous SiO(2) buffer layer
title_full Space electric field concentrated effect for Zr:SiO(2) RRAM devices using porous SiO(2) buffer layer
title_fullStr Space electric field concentrated effect for Zr:SiO(2) RRAM devices using porous SiO(2) buffer layer
title_full_unstemmed Space electric field concentrated effect for Zr:SiO(2) RRAM devices using porous SiO(2) buffer layer
title_short Space electric field concentrated effect for Zr:SiO(2) RRAM devices using porous SiO(2) buffer layer
title_sort space electric field concentrated effect for zr:sio(2) rram devices using porous sio(2) buffer layer
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3881491/
https://www.ncbi.nlm.nih.gov/pubmed/24330524
http://dx.doi.org/10.1186/1556-276X-8-523
work_keys_str_mv AT changkuanchang spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer
AT huangjenwei spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer
AT changtingchang spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer
AT tsaitsungming spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer
AT chenkaihuang spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer
AT youngtaifa spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer
AT chenjunghui spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer
AT zhangrui spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer
AT loujenchung spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer
AT huangsyuanyong spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer
AT panyinchih spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer
AT huanghuichun spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer
AT syuyongen spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer
AT gandershin spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer
AT baodinghua spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer
AT szesimonm spaceelectricfieldconcentratedeffectforzrsio2rramdevicesusingporoussio2bufferlayer

Ejemplares similares