Tuned NV emission by in-plane Al-Schottky junctions on hydrogen terminated diamond

The negatively charged nitrogen-vacancy (NV) centre exhibits outstanding optical and spin properties and thus is very attractive for applications in quantum optics. Up to now an active control of the charge state of near-surface NV centres is difficult and the centres switch in an uncontrolled way between different charge states. In this work, we demonstrate an active control of the charge state of NV centres (implanted 7 nm below the surface) by using an in-plane Schottky diode geometry from aluminium on hydrogen terminated diamond in combination with confocal micro-photoluminescence measurements. The partial quenching of NV-photoluminescence caused by the hole accumulation layer of the hydrogen terminated surface can be recovered by applying reverse bias potentials on this diode, i.e. the NV(0) charge state is depleted while the NV(−) charge state is populated. This charge state conversion is caused by the bias voltage affected modulation of the band bending in the depletion region which shifts the Fermi level across the NV charge transition levels.