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Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes
We developed a new approach to test the single-photon emissions of semiconductor quantum dots (QDs) in the optical communication band. A diamond-anvil cell pressure device was used for blue-shifting the 1.3 μm emissions of InAs/GaAs QDs to 0.9 μm for detection by silicon avalanche photodiodes. The o...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3887382/ https://www.ncbi.nlm.nih.gov/pubmed/24407193 http://dx.doi.org/10.1038/srep03633 |
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author | Zhou, P. Y. Dou, X. M. Wu, X. F. Ding, K. Li, M. F. Ni, H. Q. Niu, Z. C. Jiang, D. S. Sun, B. Q. |
author_facet | Zhou, P. Y. Dou, X. M. Wu, X. F. Ding, K. Li, M. F. Ni, H. Q. Niu, Z. C. Jiang, D. S. Sun, B. Q. |
author_sort | Zhou, P. Y. |
collection | PubMed |
description | We developed a new approach to test the single-photon emissions of semiconductor quantum dots (QDs) in the optical communication band. A diamond-anvil cell pressure device was used for blue-shifting the 1.3 μm emissions of InAs/GaAs QDs to 0.9 μm for detection by silicon avalanche photodiodes. The obtained g((2))(0) values from the second-order autocorrelation function measurements of several QD emissions at 6.58 GPa were less than 0.3, indicating that this approach provides a convenient and efficient method of characterizing 1.3 μm single-photon source based on semiconductor materials. |
format | Online Article Text |
id | pubmed-3887382 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-38873822014-01-10 Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes Zhou, P. Y. Dou, X. M. Wu, X. F. Ding, K. Li, M. F. Ni, H. Q. Niu, Z. C. Jiang, D. S. Sun, B. Q. Sci Rep Article We developed a new approach to test the single-photon emissions of semiconductor quantum dots (QDs) in the optical communication band. A diamond-anvil cell pressure device was used for blue-shifting the 1.3 μm emissions of InAs/GaAs QDs to 0.9 μm for detection by silicon avalanche photodiodes. The obtained g((2))(0) values from the second-order autocorrelation function measurements of several QD emissions at 6.58 GPa were less than 0.3, indicating that this approach provides a convenient and efficient method of characterizing 1.3 μm single-photon source based on semiconductor materials. Nature Publishing Group 2014-01-10 /pmc/articles/PMC3887382/ /pubmed/24407193 http://dx.doi.org/10.1038/srep03633 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-nd/3.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/ |
spellingShingle | Article Zhou, P. Y. Dou, X. M. Wu, X. F. Ding, K. Li, M. F. Ni, H. Q. Niu, Z. C. Jiang, D. S. Sun, B. Q. Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes |
title | Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes |
title_full | Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes |
title_fullStr | Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes |
title_full_unstemmed | Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes |
title_short | Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes |
title_sort | single-photon property characterization of 1.3 μm emissions from inas/gaas quantum dots using silicon avalanche photodiodes |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3887382/ https://www.ncbi.nlm.nih.gov/pubmed/24407193 http://dx.doi.org/10.1038/srep03633 |
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