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Ultrafast light induced unusually broad transient absorption in the sub-bandgap region of GeSe(2) thin film

In this paper, we show for the first time that ultrafast light illumination can induce an unusually broad transient optical absorption (TA), spanning of ≈ 200 nm in the sub-bandgap region of chalcogenide GeSe(2) thin films, which we interpret as being a manifestation of creation and annihilation of...

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Detalles Bibliográficos
Autores principales: Barik, A. R., Bapna, Mukund, Drabold, D. A., Adarsh, K. V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3890940/
https://www.ncbi.nlm.nih.gov/pubmed/24418896
http://dx.doi.org/10.1038/srep03686

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