Cargando…

Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor

This study examined the performance and photo-bias stability of double-channel ZnSnO/InZnO (ZTO/IZO) thin-film transistors. The field-effect mobility (μ(FE)) and photo-bias stability of the double-channel device were improved by increasing the thickness of the front IZO film (t(int)) compared to the...

Descripción completa

Detalles Bibliográficos
Autores principales:	Jung, Hong Yoon, Kang, Youngho, Hwang, Ah Young, Lee, Chang Kyu, Han, Seungwu, Kim, Dae-Hwan, Bae, Jong-Uk, Shin, Woo-Sup, Jeong, Jae Kyeong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2014
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3895876/ https://www.ncbi.nlm.nih.gov/pubmed/24441830 http://dx.doi.org/10.1038/srep03765

Ejemplares similares

Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers
por: Bak, Jun Yong, et al.
Publicado: (2015)

Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors
por: Shin, Min-Gyu, et al.
Publicado: (2020)

Light-Induced Peroxide Formation in ZnO: Origin of Persistent Photoconductivity
por: Kang, Youngho, et al.
Publicado: (2016)

First-Principles Calculations of Luminescence Spectra of Real-Scale Quantum Dots
por: Kang, Sungwoo, et al.
Publicado: (2021)

Transistor bias tables (germanium)
por: Wolfendale, Eric
Publicado: (1966)

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors
por: Shin, Min-Gyu, et al.
Publicado: (2020)

A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor
por: Meng, Qingzhi, et al.
Publicado: (2021)

Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors
por: Wang, Dapeng, et al.
Publicado: (2020)

Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors
por: Kim, Hyun-Suk, et al.
Publicado: (2013)

The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?
por: Mao, Ling-Feng, et al.
Publicado: (2015)

Lifetime estimation of thin-film transistors in organic emitting diode display panels with compensation
por: Park, Jingyu, et al.
Publicado: (2023)

Dual role of Ag nanowires in ZnO quantum dot/Ag nanowire hybrid channel photo thin film transistors
por: Wang, Weihao, et al.
Publicado: (2018)

Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations
por: Joo, Hyo-Jun, et al.
Publicado: (2019)

Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness
por: Zhang, Maolin, et al.
Publicado: (2020)

High-Mobility and Bias-Stable Field-Effect Transistors Based on Lead-Free Formamidinium Tin Iodide Perovskites
por: Zhou, Zhiwen, et al.
Publicado: (2023)

ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors
por: Lee, Lynn, et al.
Publicado: (2019)

Photo-excited charge collection spectroscopy: probing the traps in field-effect transistors
por: Im, Seongil, et al.
Publicado: (2013)

A single n-type semiconducting polymer-based photo-electrochemical transistor
por: Druet, Victor, et al.
Publicado: (2023)

Graphene nanoribbon field-effect transistor at high bias
por: Ghadiry, Mahdiar, et al.
Publicado: (2014)

An Automated Reverse-Bias Second-Breakdown Transistor Tester
por: Berning, David
Publicado: (1991)

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors
por: Wang, Dapeng, et al.
Publicado: (2019)

Ultrashort Vertical‐Channel van der Waals Semiconductor Transistors
por: Jiang, Jinbao, et al.
Publicado: (2019)

Faces of the CMS Collaboration (original photos)
por: Hoch, M
Publicado: (2010)

Late-Developing Metastatic Malignant Melanoma in the Thoracic Spine Originating from Choroidal Melanoma
por: Hwang, Jun Kyu, et al.
Publicado: (2017)

Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors
por: Hwang, Yu-Jin, et al.
Publicado: (2022)

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers
por: Zhang, Ying, et al.
Publicado: (2019)

Graphene-Based Nanoscale Vacuum Channel Transistor
por: Xu, Ji, et al.
Publicado: (2018)

Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors
por: Kang, Soo Cheol, et al.
Publicado: (2020)

Measurement of beta-amyloid peptides in specific cells using a photo thin-film transistor
por: Kim, Chang-Beom, et al.
Publicado: (2012)

Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array
por: Lee, Hsin-Ying, et al.
Publicado: (2021)

Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array
por: Lee, Hsin-Ying, et al.
Publicado: (2021)

High-mobility junction field-effect transistor via graphene/MoS(2) heterointerface
por: Kim, Taesoo, et al.
Publicado: (2020)

Some remarks on double photo-production
por: Boccaletti, D, et al.
Publicado: (1961)

Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition
por: Yoon, So-Jung, et al.
Publicado: (2018)

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor
por: Ilić, Stefan, et al.
Publicado: (2020)

GaAs Nanomembranes in the High Electron Mobility Transistor Technology
por: Gregušová, Dagmar, et al.
Publicado: (2021)

Vertical Field Emission Air-Channel Diodes and Transistors
por: Chang, Wen-Teng, et al.
Publicado: (2019)

Design and circuit simulation of nanoscale vacuum channel transistors
por: Xu, Ji, et al.
Publicado: (2020)

Independent Dual-Channel Approach to Mesoscopic Graphene Transistors
por: Sánchez, Fernando, et al.
Publicado: (2022)

Structure Optimization of Planar Nanoscale Vacuum Channel Transistor
por: Xu, Ji, et al.
Publicado: (2023)

Cannot write session to /tmp/vufind_sessions/sess_uqij0nqfosgfg6ckjte4bho1ah