Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of...

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Detalles Bibliográficos
Autores principales: Lisesivdin, Sefer Bora, Khan, Nadir Ali, Mazzucato, Simone, Balkan, Naci, Adams, Michael John, Korpijärvi, Ville-Markus, Guina, Mircea, Mezosi, Gabor, Sorel, Marc
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3896757/
https://www.ncbi.nlm.nih.gov/pubmed/24417791
http://dx.doi.org/10.1186/1556-276X-9-22
Descripción
Sumario:We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain.

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