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Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy

InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for high...

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Detalles Bibliográficos
Autores principales:	Gu, Yi, Wang, Kai, Zhou, Haifei, Li, Yaoyao, Cao, Chunfang, Zhang, Liyao, Zhang, Yonggang, Gong, Qian, Wang, Shumin
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2014
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3902058/ https://www.ncbi.nlm.nih.gov/pubmed/24417882 http://dx.doi.org/10.1186/1556-276X-9-24

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