Carrier trapping and escape times in p-i-n GaInNAs MQW structures

We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structure...

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Detalles Bibliográficos
Autores principales: Khalil, Hagir M, Balkan, Naci
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3902426/
https://www.ncbi.nlm.nih.gov/pubmed/24417767
http://dx.doi.org/10.1186/1556-276X-9-21
Descripción
Sumario:We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structures, in terms of charge accumulation and resonance tunnelling.

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