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Carrier trapping and escape times in p-i-n GaInNAs MQW structures
We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structure...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3902426/ https://www.ncbi.nlm.nih.gov/pubmed/24417767 http://dx.doi.org/10.1186/1556-276X-9-21 |
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author | Khalil, Hagir M Balkan, Naci |
author_facet | Khalil, Hagir M Balkan, Naci |
author_sort | Khalil, Hagir M |
collection | PubMed |
description | We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structures, in terms of charge accumulation and resonance tunnelling. |
format | Online Article Text |
id | pubmed-3902426 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-39024262014-02-07 Carrier trapping and escape times in p-i-n GaInNAs MQW structures Khalil, Hagir M Balkan, Naci Nanoscale Res Lett Nano Express We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structures, in terms of charge accumulation and resonance tunnelling. Springer 2014-01-13 /pmc/articles/PMC3902426/ /pubmed/24417767 http://dx.doi.org/10.1186/1556-276X-9-21 Text en Copyright © 2014 Khalil and Balkan; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Khalil, Hagir M Balkan, Naci Carrier trapping and escape times in p-i-n GaInNAs MQW structures |
title | Carrier trapping and escape times in p-i-n GaInNAs MQW structures |
title_full | Carrier trapping and escape times in p-i-n GaInNAs MQW structures |
title_fullStr | Carrier trapping and escape times in p-i-n GaInNAs MQW structures |
title_full_unstemmed | Carrier trapping and escape times in p-i-n GaInNAs MQW structures |
title_short | Carrier trapping and escape times in p-i-n GaInNAs MQW structures |
title_sort | carrier trapping and escape times in p-i-n gainnas mqw structures |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3902426/ https://www.ncbi.nlm.nih.gov/pubmed/24417767 http://dx.doi.org/10.1186/1556-276X-9-21 |
work_keys_str_mv | AT khalilhagirm carriertrappingandescapetimesinpingainnasmqwstructures AT balkannaci carriertrappingandescapetimesinpingainnasmqwstructures |