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Carrier trapping and escape times in p-i-n GaInNAs MQW structures

We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structure...

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Detalles Bibliográficos
Autores principales: Khalil, Hagir M, Balkan, Naci
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3902426/
https://www.ncbi.nlm.nih.gov/pubmed/24417767
http://dx.doi.org/10.1186/1556-276X-9-21
_version_ 1782300982079651840
author Khalil, Hagir M
Balkan, Naci
author_facet Khalil, Hagir M
Balkan, Naci
author_sort Khalil, Hagir M
collection PubMed
description We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structures, in terms of charge accumulation and resonance tunnelling.
format Online
Article
Text
id pubmed-3902426
institution National Center for Biotechnology Information
language English
publishDate 2014
publisher Springer
record_format MEDLINE/PubMed
spelling pubmed-39024262014-02-07 Carrier trapping and escape times in p-i-n GaInNAs MQW structures Khalil, Hagir M Balkan, Naci Nanoscale Res Lett Nano Express We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structures, in terms of charge accumulation and resonance tunnelling. Springer 2014-01-13 /pmc/articles/PMC3902426/ /pubmed/24417767 http://dx.doi.org/10.1186/1556-276X-9-21 Text en Copyright © 2014 Khalil and Balkan; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Khalil, Hagir M
Balkan, Naci
Carrier trapping and escape times in p-i-n GaInNAs MQW structures
title Carrier trapping and escape times in p-i-n GaInNAs MQW structures
title_full Carrier trapping and escape times in p-i-n GaInNAs MQW structures
title_fullStr Carrier trapping and escape times in p-i-n GaInNAs MQW structures
title_full_unstemmed Carrier trapping and escape times in p-i-n GaInNAs MQW structures
title_short Carrier trapping and escape times in p-i-n GaInNAs MQW structures
title_sort carrier trapping and escape times in p-i-n gainnas mqw structures
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3902426/
https://www.ncbi.nlm.nih.gov/pubmed/24417767
http://dx.doi.org/10.1186/1556-276X-9-21
work_keys_str_mv AT khalilhagirm carriertrappingandescapetimesinpingainnasmqwstructures
AT balkannaci carriertrappingandescapetimesinpingainnasmqwstructures