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Carrier trapping and escape times in p-i-n GaInNAs MQW structures
We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structure...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3902426/ https://www.ncbi.nlm.nih.gov/pubmed/24417767 http://dx.doi.org/10.1186/1556-276X-9-21 |