In situ TEM Observation of Resistance Switching in Titanate Based Device

After decades of efforts, the research on resistance switching (RS) behavior in transition metal oxides has shifted to the stage of verifying the proposed models by direct experimental evidences. In this paper, RS behavior and oxygen content variation of La(0.85)Sr(0.15)TiO(3)/SrTiO(3):Nb (LSTO/STON...

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Detalles Bibliográficos
Autores principales: Yang, Yang, Lü, Weiming, Yao, Yuan, Sun, Jirong, Gu, Changzhi, Gu, Lin, Wang, Yanguo, Duan, Xiaofeng, Yu, Richeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3902442/
https://www.ncbi.nlm.nih.gov/pubmed/24463532
http://dx.doi.org/10.1038/srep03890
Descripción
Sumario:After decades of efforts, the research on resistance switching (RS) behavior in transition metal oxides has shifted to the stage of verifying the proposed models by direct experimental evidences. In this paper, RS behavior and oxygen content variation of La(0.85)Sr(0.15)TiO(3)/SrTiO(3):Nb (LSTO/STON) were investigated by in situ transmission electron microscopy observation and in situ electron energy loss spectrum characterization under external electric field. The oxygen content fluctuation adjusted by applied bias has been investigated and the observed results imply the conductive channels should be formed by the oxygen vacancy at the Pt/LSTO interface. Moreover, in situ TEM characterization displays the advantage - to reveal the origin of various RS behaviors.

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