High Mg effective incorporation in Al-rich Al( x )Ga(1 - x )N by periodic repetition of ultimate V/III ratio conditions

According to first-principles calculations, the solubility of Mg as a substitute for Ga or Al in Al( x )Ga(1 – x )N bulk is limited by large, positive formation enthalpies. In contrast to the bulk case, the formation enthalpies become negative on Al( x )Ga(1 – x )N surface. In addition, the N-rich g...

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Autores principales: Zheng, Tongchang, Lin, Wei, Cai, Duanjun, Yang, Weihuang, Jiang, Wei, Chen, Hangyang, Li, Jinchai, Li, Shuping, Kang, Junyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3903010/
https://www.ncbi.nlm.nih.gov/pubmed/24444104
http://dx.doi.org/10.1186/1556-276X-9-40
_version_ 1782301057483800576
author Zheng, Tongchang
Lin, Wei
Cai, Duanjun
Yang, Weihuang
Jiang, Wei
Chen, Hangyang
Li, Jinchai
Li, Shuping
Kang, Junyong
author_facet Zheng, Tongchang
Lin, Wei
Cai, Duanjun
Yang, Weihuang
Jiang, Wei
Chen, Hangyang
Li, Jinchai
Li, Shuping
Kang, Junyong
author_sort Zheng, Tongchang
collection PubMed
description According to first-principles calculations, the solubility of Mg as a substitute for Ga or Al in Al( x )Ga(1 – x )N bulk is limited by large, positive formation enthalpies. In contrast to the bulk case, the formation enthalpies become negative on Al( x )Ga(1 – x )N surface. In addition, the N-rich growth atmosphere can also be favorable to Mg incorporation on the surface by changing the chemical potentials. On the basis of these special features, we proposed a modified surface engineering technique that applies periodical interruptions under an ultimate V/III ratio condition (extremely N-rich), to enhance Mg effective incorporation. By optimizing the interruption conditions (2 nm interruption interval with 2 s interruption time), the enhancement ratio can be up to about 5 in the Al(0.99)Ga(0.01)N epilayer.
format Online
Article
Text
id pubmed-3903010
institution National Center for Biotechnology Information
language English
publishDate 2014
publisher Springer
record_format MEDLINE/PubMed
spelling pubmed-39030102014-02-07 High Mg effective incorporation in Al-rich Al( x )Ga(1 - x )N by periodic repetition of ultimate V/III ratio conditions Zheng, Tongchang Lin, Wei Cai, Duanjun Yang, Weihuang Jiang, Wei Chen, Hangyang Li, Jinchai Li, Shuping Kang, Junyong Nanoscale Res Lett Nano Express According to first-principles calculations, the solubility of Mg as a substitute for Ga or Al in Al( x )Ga(1 – x )N bulk is limited by large, positive formation enthalpies. In contrast to the bulk case, the formation enthalpies become negative on Al( x )Ga(1 – x )N surface. In addition, the N-rich growth atmosphere can also be favorable to Mg incorporation on the surface by changing the chemical potentials. On the basis of these special features, we proposed a modified surface engineering technique that applies periodical interruptions under an ultimate V/III ratio condition (extremely N-rich), to enhance Mg effective incorporation. By optimizing the interruption conditions (2 nm interruption interval with 2 s interruption time), the enhancement ratio can be up to about 5 in the Al(0.99)Ga(0.01)N epilayer. Springer 2014-01-21 /pmc/articles/PMC3903010/ /pubmed/24444104 http://dx.doi.org/10.1186/1556-276X-9-40 Text en Copyright © 2014 Zheng et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Zheng, Tongchang
Lin, Wei
Cai, Duanjun
Yang, Weihuang
Jiang, Wei
Chen, Hangyang
Li, Jinchai
Li, Shuping
Kang, Junyong
High Mg effective incorporation in Al-rich Al( x )Ga(1 - x )N by periodic repetition of ultimate V/III ratio conditions
title High Mg effective incorporation in Al-rich Al( x )Ga(1 - x )N by periodic repetition of ultimate V/III ratio conditions
title_full High Mg effective incorporation in Al-rich Al( x )Ga(1 - x )N by periodic repetition of ultimate V/III ratio conditions
title_fullStr High Mg effective incorporation in Al-rich Al( x )Ga(1 - x )N by periodic repetition of ultimate V/III ratio conditions
title_full_unstemmed High Mg effective incorporation in Al-rich Al( x )Ga(1 - x )N by periodic repetition of ultimate V/III ratio conditions
title_short High Mg effective incorporation in Al-rich Al( x )Ga(1 - x )N by periodic repetition of ultimate V/III ratio conditions
title_sort high mg effective incorporation in al-rich al( x )ga(1 - x )n by periodic repetition of ultimate v/iii ratio conditions
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3903010/
https://www.ncbi.nlm.nih.gov/pubmed/24444104
http://dx.doi.org/10.1186/1556-276X-9-40
work_keys_str_mv AT zhengtongchang highmgeffectiveincorporationinalrichalxga1xnbyperiodicrepetitionofultimateviiiratioconditions
AT linwei highmgeffectiveincorporationinalrichalxga1xnbyperiodicrepetitionofultimateviiiratioconditions
AT caiduanjun highmgeffectiveincorporationinalrichalxga1xnbyperiodicrepetitionofultimateviiiratioconditions
AT yangweihuang highmgeffectiveincorporationinalrichalxga1xnbyperiodicrepetitionofultimateviiiratioconditions
AT jiangwei highmgeffectiveincorporationinalrichalxga1xnbyperiodicrepetitionofultimateviiiratioconditions
AT chenhangyang highmgeffectiveincorporationinalrichalxga1xnbyperiodicrepetitionofultimateviiiratioconditions
AT lijinchai highmgeffectiveincorporationinalrichalxga1xnbyperiodicrepetitionofultimateviiiratioconditions
AT lishuping highmgeffectiveincorporationinalrichalxga1xnbyperiodicrepetitionofultimateviiiratioconditions
AT kangjunyong highmgeffectiveincorporationinalrichalxga1xnbyperiodicrepetitionofultimateviiiratioconditions

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