Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi

The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffractio...

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Detalles Bibliográficos
Autores principales: Mazzucato, Simone, Lehec, Henri, Carrère, Helene, Makhloufi, Hajer, Arnoult, Alexandre, Fontaine, Chantal, Amand, Thierry, Marie, Xavier
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3903432/
https://www.ncbi.nlm.nih.gov/pubmed/24418528
http://dx.doi.org/10.1186/1556-276X-9-19
Descripción
Sumario:The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier trapping and recombination mechanisms involving the Bi-related localized levels. Clear distinction between the localized and delocalized regime was observed in the spectral and temporal photoluminescence emission.

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