Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi

The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffractio...

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Detalles Bibliográficos
Autores principales: Mazzucato, Simone, Lehec, Henri, Carrère, Helene, Makhloufi, Hajer, Arnoult, Alexandre, Fontaine, Chantal, Amand, Thierry, Marie, Xavier
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3903432/
https://www.ncbi.nlm.nih.gov/pubmed/24418528
http://dx.doi.org/10.1186/1556-276X-9-19
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author Mazzucato, Simone
Lehec, Henri
Carrère, Helene
Makhloufi, Hajer
Arnoult, Alexandre
Fontaine, Chantal
Amand, Thierry
Marie, Xavier
author_facet Mazzucato, Simone
Lehec, Henri
Carrère, Helene
Makhloufi, Hajer
Arnoult, Alexandre
Fontaine, Chantal
Amand, Thierry
Marie, Xavier
author_sort Mazzucato, Simone
collection PubMed
description The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier trapping and recombination mechanisms involving the Bi-related localized levels. Clear distinction between the localized and delocalized regime was observed in the spectral and temporal photoluminescence emission.
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spelling pubmed-39034322014-02-07 Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi Mazzucato, Simone Lehec, Henri Carrère, Helene Makhloufi, Hajer Arnoult, Alexandre Fontaine, Chantal Amand, Thierry Marie, Xavier Nanoscale Res Lett Nano Review The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier trapping and recombination mechanisms involving the Bi-related localized levels. Clear distinction between the localized and delocalized regime was observed in the spectral and temporal photoluminescence emission. Springer 2014-01-13 /pmc/articles/PMC3903432/ /pubmed/24418528 http://dx.doi.org/10.1186/1556-276X-9-19 Text en Copyright © 2014 Mazzucato et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Review
Mazzucato, Simone
Lehec, Henri
Carrère, Helene
Makhloufi, Hajer
Arnoult, Alexandre
Fontaine, Chantal
Amand, Thierry
Marie, Xavier
Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi
title Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi
title_full Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi
title_fullStr Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi
title_full_unstemmed Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi
title_short Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi
title_sort low-temperature photoluminescence study of exciton recombination in bulk gaasbi
topic Nano Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3903432/
https://www.ncbi.nlm.nih.gov/pubmed/24418528
http://dx.doi.org/10.1186/1556-276X-9-19
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