High-mobility ambipolar ZnO-graphene hybrid thin film transistors

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstan...

Descripción completa

Detalles Bibliográficos
Autores principales: Song, Wooseok, Kwon, Soon Yeol, Myung, Sung, Jung, Min Wook, Kim, Seong Jun, Min, Bok Ki, Kang, Min-A, Kim, Sung Ho, Lim, Jongsun, An, Ki-Seok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3920279/
https://www.ncbi.nlm.nih.gov/pubmed/24513629
http://dx.doi.org/10.1038/srep04064
Descripción
Sumario:In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm(2)/V·s, and a high on-off ratio of 10(5). The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.

Ejemplares similares