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High-Q CMOS-integrated photonic crystal microcavity devices
Integrated optical resonators are necessary or beneficial in realizations of various functions in scaled photonic platforms, including filtering, modulation, and detection in classical communication systems, optical sensing, as well as addressing and control of solid state emitters for quantum techn...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3921634/ https://www.ncbi.nlm.nih.gov/pubmed/24518161 http://dx.doi.org/10.1038/srep04077 |
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author | Mehta, Karan K. Orcutt, Jason S. Tehar-Zahav, Ofer Sternberg, Zvi Bafrali, Reha Meade, Roy Ram, Rajeev J. |
author_facet | Mehta, Karan K. Orcutt, Jason S. Tehar-Zahav, Ofer Sternberg, Zvi Bafrali, Reha Meade, Roy Ram, Rajeev J. |
author_sort | Mehta, Karan K. |
collection | PubMed |
description | Integrated optical resonators are necessary or beneficial in realizations of various functions in scaled photonic platforms, including filtering, modulation, and detection in classical communication systems, optical sensing, as well as addressing and control of solid state emitters for quantum technologies. Although photonic crystal (PhC) microresonators can be advantageous to the more commonly used microring devices due to the former's low mode volumes, fabrication of PhC cavities has typically relied on electron-beam lithography, which precludes integration with large-scale and reproducible CMOS fabrication. Here, we demonstrate wavelength-scale polycrystalline silicon (pSi) PhC microresonators with Qs up to 60,000 fabricated within a bulk CMOS process. Quasi-1D resonators in lateral p-i-n structures allow for resonant defect-state photodetection in all-silicon devices, exhibiting voltage-dependent quantum efficiencies in the range of a few 10 s of %, few-GHz bandwidths, and low dark currents, in devices with loaded Qs in the range of 4,300–9,300; one device, for example, exhibited a loaded Q of 4,300, 25% quantum efficiency (corresponding to a responsivity of 0.31 A/W), 3 GHz bandwidth, and 30 nA dark current at a reverse bias of 30 V. This work demonstrates the possibility for practical integration of PhC microresonators with active electro-optic capability into large-scale silicon photonic systems. |
format | Online Article Text |
id | pubmed-3921634 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-39216342014-02-25 High-Q CMOS-integrated photonic crystal microcavity devices Mehta, Karan K. Orcutt, Jason S. Tehar-Zahav, Ofer Sternberg, Zvi Bafrali, Reha Meade, Roy Ram, Rajeev J. Sci Rep Article Integrated optical resonators are necessary or beneficial in realizations of various functions in scaled photonic platforms, including filtering, modulation, and detection in classical communication systems, optical sensing, as well as addressing and control of solid state emitters for quantum technologies. Although photonic crystal (PhC) microresonators can be advantageous to the more commonly used microring devices due to the former's low mode volumes, fabrication of PhC cavities has typically relied on electron-beam lithography, which precludes integration with large-scale and reproducible CMOS fabrication. Here, we demonstrate wavelength-scale polycrystalline silicon (pSi) PhC microresonators with Qs up to 60,000 fabricated within a bulk CMOS process. Quasi-1D resonators in lateral p-i-n structures allow for resonant defect-state photodetection in all-silicon devices, exhibiting voltage-dependent quantum efficiencies in the range of a few 10 s of %, few-GHz bandwidths, and low dark currents, in devices with loaded Qs in the range of 4,300–9,300; one device, for example, exhibited a loaded Q of 4,300, 25% quantum efficiency (corresponding to a responsivity of 0.31 A/W), 3 GHz bandwidth, and 30 nA dark current at a reverse bias of 30 V. This work demonstrates the possibility for practical integration of PhC microresonators with active electro-optic capability into large-scale silicon photonic systems. Nature Publishing Group 2014-02-12 /pmc/articles/PMC3921634/ /pubmed/24518161 http://dx.doi.org/10.1038/srep04077 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-sa/3.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-sa/3.0/ |
spellingShingle | Article Mehta, Karan K. Orcutt, Jason S. Tehar-Zahav, Ofer Sternberg, Zvi Bafrali, Reha Meade, Roy Ram, Rajeev J. High-Q CMOS-integrated photonic crystal microcavity devices |
title | High-Q CMOS-integrated photonic crystal microcavity devices |
title_full | High-Q CMOS-integrated photonic crystal microcavity devices |
title_fullStr | High-Q CMOS-integrated photonic crystal microcavity devices |
title_full_unstemmed | High-Q CMOS-integrated photonic crystal microcavity devices |
title_short | High-Q CMOS-integrated photonic crystal microcavity devices |
title_sort | high-q cmos-integrated photonic crystal microcavity devices |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3921634/ https://www.ncbi.nlm.nih.gov/pubmed/24518161 http://dx.doi.org/10.1038/srep04077 |
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