Performance assessment of multijunction solar cells incorporating GaInNAsSb

We have measured the characteristics of molecular beam epitaxy grown GaInNAsSb solar cells with different bandgaps using AM1.5G real sun illumination. Based on the solar cell diode characteristics and known parameters for state-of-the-art GaInP/GaAs and GaInP/GaAs/Ge cells, we have calculated the re...

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Detalles Bibliográficos
Autores principales: Aho, Arto, Tukiainen, Antti, Polojärvi, Ville, Guina, Mircea
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3923094/
https://www.ncbi.nlm.nih.gov/pubmed/24498981
http://dx.doi.org/10.1186/1556-276X-9-61
Descripción
Sumario:We have measured the characteristics of molecular beam epitaxy grown GaInNAsSb solar cells with different bandgaps using AM1.5G real sun illumination. Based on the solar cell diode characteristics and known parameters for state-of-the-art GaInP/GaAs and GaInP/GaAs/Ge cells, we have calculated the realistic potential efficiency increase for GaInP/GaAs/GaInNAsSb and GaInP/GaAs/GaInNAsSb/Ge multijunction solar cells for different current matching conditions. The analyses reveal that realistic GaInNAsSb solar cell parameters, render possible an extraction efficiency of over 36% at 1-sun AM1.5D illumination. PACS: 88.40.hj; 88.40.jm; 88.40.jp; 81.15.Hi

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