Analytical modeling of uniaxial strain effects on the performance of double-gate graphene nanoribbon field-effect transistors

The effects of uniaxial tensile strain on the ultimate performance of a dual-gated graphene nanoribbon field-effect transistor (GNR-FET) are studied using a fully analytical model based on effective mass approximation and semiclassical ballistic transport. The model incorporates the effects of edge...

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Detalles Bibliográficos
Autor principal: Kliros, George S
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3923746/
https://www.ncbi.nlm.nih.gov/pubmed/24506842
http://dx.doi.org/10.1186/1556-276X-9-65

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3923746/
https://www.ncbi.nlm.nih.gov/pubmed/24506842
http://dx.doi.org/10.1186/1556-276X-9-65

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