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Probing substrate influence on graphene by analyzing Raman lineshapes

We provide a new approach to identify the substrate influence on graphene surface. Distinguishing the substrate influences or the doping effects of charged impurities on graphene can be realized by optically probing the graphene surfaces, included the suspended and supported graphene. In this work,...

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Autores principales: Huang, Chen-Han, Lin, Hsing-Ying, Huang, Cheng-Wen, Liu, Yi-Min, Shih, Fu-Yu, Wang, Wei-Hua, Chui, Hsiang-Chen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3924919/
https://www.ncbi.nlm.nih.gov/pubmed/24506825
http://dx.doi.org/10.1186/1556-276X-9-64
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author Huang, Chen-Han
Lin, Hsing-Ying
Huang, Cheng-Wen
Liu, Yi-Min
Shih, Fu-Yu
Wang, Wei-Hua
Chui, Hsiang-Chen
author_facet Huang, Chen-Han
Lin, Hsing-Ying
Huang, Cheng-Wen
Liu, Yi-Min
Shih, Fu-Yu
Wang, Wei-Hua
Chui, Hsiang-Chen
author_sort Huang, Chen-Han
collection PubMed
description We provide a new approach to identify the substrate influence on graphene surface. Distinguishing the substrate influences or the doping effects of charged impurities on graphene can be realized by optically probing the graphene surfaces, included the suspended and supported graphene. In this work, the line scan of Raman spectroscopy was performed across the graphene surface on the ordered square hole. Then, the bandwidths of G-band and 2D-band were fitted into the Voigt profile, a convolution of Gaussian and Lorentzian profiles. The bandwidths of Lorentzian parts were kept as constant whether it is the suspended and supported graphene. For the Gaussian part, the suspended graphene exhibits much greater Gaussian bandwidths than those of the supported graphene. It reveals that the doping effect on supported graphene is stronger than that of suspended graphene. Compared with the previous studies, we also used the peak positions of G bands, and I(2D)/I(G) ratios to confirm that our method really works. For the suspended graphene, the peak positions of G band are downshifted with respect to supported graphene, and the I(2D)/I(G) ratios of suspended graphene are larger than those of supported graphene. With data fitting into Voigt profile, one can find out the information behind the lineshapes.
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spelling pubmed-39249192014-02-20 Probing substrate influence on graphene by analyzing Raman lineshapes Huang, Chen-Han Lin, Hsing-Ying Huang, Cheng-Wen Liu, Yi-Min Shih, Fu-Yu Wang, Wei-Hua Chui, Hsiang-Chen Nanoscale Res Lett Nano Express We provide a new approach to identify the substrate influence on graphene surface. Distinguishing the substrate influences or the doping effects of charged impurities on graphene can be realized by optically probing the graphene surfaces, included the suspended and supported graphene. In this work, the line scan of Raman spectroscopy was performed across the graphene surface on the ordered square hole. Then, the bandwidths of G-band and 2D-band were fitted into the Voigt profile, a convolution of Gaussian and Lorentzian profiles. The bandwidths of Lorentzian parts were kept as constant whether it is the suspended and supported graphene. For the Gaussian part, the suspended graphene exhibits much greater Gaussian bandwidths than those of the supported graphene. It reveals that the doping effect on supported graphene is stronger than that of suspended graphene. Compared with the previous studies, we also used the peak positions of G bands, and I(2D)/I(G) ratios to confirm that our method really works. For the suspended graphene, the peak positions of G band are downshifted with respect to supported graphene, and the I(2D)/I(G) ratios of suspended graphene are larger than those of supported graphene. With data fitting into Voigt profile, one can find out the information behind the lineshapes. Springer 2014-02-07 /pmc/articles/PMC3924919/ /pubmed/24506825 http://dx.doi.org/10.1186/1556-276X-9-64 Text en Copyright © 2014 Huang et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Huang, Chen-Han
Lin, Hsing-Ying
Huang, Cheng-Wen
Liu, Yi-Min
Shih, Fu-Yu
Wang, Wei-Hua
Chui, Hsiang-Chen
Probing substrate influence on graphene by analyzing Raman lineshapes
title Probing substrate influence on graphene by analyzing Raman lineshapes
title_full Probing substrate influence on graphene by analyzing Raman lineshapes
title_fullStr Probing substrate influence on graphene by analyzing Raman lineshapes
title_full_unstemmed Probing substrate influence on graphene by analyzing Raman lineshapes
title_short Probing substrate influence on graphene by analyzing Raman lineshapes
title_sort probing substrate influence on graphene by analyzing raman lineshapes
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3924919/
https://www.ncbi.nlm.nih.gov/pubmed/24506825
http://dx.doi.org/10.1186/1556-276X-9-64
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