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Bistability of Hydrogen in ZnO: Origin of Doping Limit and Persistent Photoconductivity

Substitutional hydrogen at oxygen site (H(O)) is well-known to be a robust source of n-type conductivity in ZnO, but a puzzling aspect is that the doping limit by hydrogen is only about 10(18) cm(−3), even if solubility limit is much higher. Another puzzling aspect of ZnO is persistent photoconducti...

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Detalles Bibliográficos
Autores principales: Nahm, Ho-Hyun, Park, C. H., Kim, Yong-Sung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3927214/
https://www.ncbi.nlm.nih.gov/pubmed/24535157
http://dx.doi.org/10.1038/srep04124