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Bistability of Hydrogen in ZnO: Origin of Doping Limit and Persistent Photoconductivity
Substitutional hydrogen at oxygen site (H(O)) is well-known to be a robust source of n-type conductivity in ZnO, but a puzzling aspect is that the doping limit by hydrogen is only about 10(18) cm(−3), even if solubility limit is much higher. Another puzzling aspect of ZnO is persistent photoconducti...
Autores principales: | Nahm, Ho-Hyun, Park, C. H., Kim, Yong-Sung |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3927214/ https://www.ncbi.nlm.nih.gov/pubmed/24535157 http://dx.doi.org/10.1038/srep04124 |
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