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Frequency-converted dilute nitride laser diodes for mobile display applications

We demonstrate a 1240-nm GaInNAs multi-quantum well laser diode with an integrated saturable electro-absorber whose wavelength is converted to 620 nm. For conversion, we used a MgO:LN nonlinear waveguide crystal with an integrated Bragg grating in direct coupling configuration. Broadened visible spe...

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Detalles Bibliográficos
Autores principales: Konttinen, Janne, Korpijärvi, Ville-Markus
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3931837/
https://www.ncbi.nlm.nih.gov/pubmed/24533776
http://dx.doi.org/10.1186/1556-276X-9-82
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author Konttinen, Janne
Korpijärvi, Ville-Markus
author_facet Konttinen, Janne
Korpijärvi, Ville-Markus
author_sort Konttinen, Janne
collection PubMed
description We demonstrate a 1240-nm GaInNAs multi-quantum well laser diode with an integrated saturable electro-absorber whose wavelength is converted to 620 nm. For conversion, we used a MgO:LN nonlinear waveguide crystal with an integrated Bragg grating in direct coupling configuration. Broadened visible spectral width and reduced speckle as well as a high extinction ratio between the below and above threshold powers were observed in passively triggered pulsed operation with smooth direct current modulation characteristics. The demonstration opens a new avenue for developing 620-nm semiconductor lasers required for emerging projection applications.
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spelling pubmed-39318372014-02-24 Frequency-converted dilute nitride laser diodes for mobile display applications Konttinen, Janne Korpijärvi, Ville-Markus Nanoscale Res Lett Nano Express We demonstrate a 1240-nm GaInNAs multi-quantum well laser diode with an integrated saturable electro-absorber whose wavelength is converted to 620 nm. For conversion, we used a MgO:LN nonlinear waveguide crystal with an integrated Bragg grating in direct coupling configuration. Broadened visible spectral width and reduced speckle as well as a high extinction ratio between the below and above threshold powers were observed in passively triggered pulsed operation with smooth direct current modulation characteristics. The demonstration opens a new avenue for developing 620-nm semiconductor lasers required for emerging projection applications. Springer 2014-02-17 /pmc/articles/PMC3931837/ /pubmed/24533776 http://dx.doi.org/10.1186/1556-276X-9-82 Text en Copyright © 2014 Konttinen and Korpijärvi; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Konttinen, Janne
Korpijärvi, Ville-Markus
Frequency-converted dilute nitride laser diodes for mobile display applications
title Frequency-converted dilute nitride laser diodes for mobile display applications
title_full Frequency-converted dilute nitride laser diodes for mobile display applications
title_fullStr Frequency-converted dilute nitride laser diodes for mobile display applications
title_full_unstemmed Frequency-converted dilute nitride laser diodes for mobile display applications
title_short Frequency-converted dilute nitride laser diodes for mobile display applications
title_sort frequency-converted dilute nitride laser diodes for mobile display applications
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3931837/
https://www.ncbi.nlm.nih.gov/pubmed/24533776
http://dx.doi.org/10.1186/1556-276X-9-82
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