Cargando…

Doping Induced Structural Stability and Electronic Properties of GaN Nanotubes

The present paper discusses the effect of manganese doping on the structural stability and electronic band gap of chiral (2, 1), armchair (3, 3), and zigzag ((6, 0) and (10, 0)) single walled GaN nanotube by using density functional theory based Atomistix Toolkit (ATK) Virtual NanoLab (VNL). The str...

Descripción completa

Detalles Bibliográficos
Autores principales:	Srivastava, Anurag, Khan, Mohammad Irfan, Tyagi, Neha, Swaroop Khare, Purnima
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Hindawi Publishing Corporation 2014
Materias:	Research Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3953657/ https://www.ncbi.nlm.nih.gov/pubmed/24707225 http://dx.doi.org/10.1155/2014/984591

Ejemplares similares

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
por: Arteev, Dmitri S., et al.
Publicado: (2022)

Implantation doping and hydrogen passivation of GaN
por: Burchard, A, et al.
Publicado: (1997)

MOCVD Growth and Characterization of Be-Doped GaN
por: McEwen, Benjamin, et al.
Publicado: (2022)

Nanostars in Highly Si-Doped GaN
por: Sawicka, Marta, et al.
Publicado: (2023)

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
por: Zhao, Ying, et al.
Publicado: (2020)

Laser slice thinning of GaN-on-GaN high electron mobility transistors
por: Tanaka, Atsushi, et al.
Publicado: (2022)

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates
por: Kumar, Ashutosh, et al.
Publicado: (2018)

Thermal neutron transmutation doping of GaN semiconductors
por: Barber, R., et al.
Publicado: (2020)

Negative Magnetoresistivity in Highly Doped n-Type GaN
por: Konczewicz, Leszek, et al.
Publicado: (2022)

GaN Haeckelite Single-Layered Nanostructures: Monolayer and Nanotubes
por: Camacho-Mojica, Dulce C., et al.
Publicado: (2015)

Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor
por: Esendag, Volkan, et al.
Publicado: (2022)

Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors
por: Tanaka, Atsushi, et al.
Publicado: (2022)

Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells
por: Naskar, Nilanjon, et al.
Publicado: (2020)

High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT
por: Dai, Jin-Ji, et al.
Publicado: (2021)

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014)

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
por: Wojtasiak, Wojciech, et al.
Publicado: (2018)

Impact of Plasma Electron Flux on Plasma Damage‐Free Sputtering of Ultrathin Tin‐Doped Indium Oxide Contact Layer on p‐GaN for InGaN/GaN Light‐Emitting Diodes
por: Son, Kwang Jeong, et al.
Publicado: (2017)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
por: Wang, Xiaowei, et al.
Publicado: (2020)

Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals
por: Qin, Hongbo, et al.
Publicado: (2017)

Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures
por: Deng, Zhongxun, et al.
Publicado: (2019)

Identification of Ag and Cd photoluminescence in $^{111}$Ag-doped GaN
por: Stötzler, A, et al.
Publicado: (1999)

Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots
por: Lin, T. N., et al.
Publicado: (2016)

Study of the heavily p-type doping of cubic GaN with Mg
por: Hernández-Gutiérrez, C. A., et al.
Publicado: (2020)

Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN
por: Zhang, Yuheng, et al.
Publicado: (2020)

Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium
por: Schiavon, Dario, et al.
Publicado: (2021)

The Evolution of Manufacturing Technology for GaN Electronic Devices
por: Liu, An-Chen, et al.
Publicado: (2021)

The Role of GaN in the Heterostructure WS(2)/GaN for SERS Applications
por: Ko, Tsung-Shine, et al.
Publicado: (2023)

Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires
por: Nicolai, Lars, et al.
Publicado: (2019)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023)

Investigation of AlGaN/GaN HFET and VO(2) Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers
por: Bayram, Ferhat, et al.
Publicado: (2020)

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate
por: Huang, Yu-Chun, et al.
Publicado: (2021)

The Features of Phase Stability of GaN and AlN Films at Nanolevel
por: Chepkasov, Ilya V., et al.
Publicado: (2020)

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
por: Sandupatla, Abhinay, et al.
Publicado: (2020)

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate
por: Wu, Peng, et al.
Publicado: (2022)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
por: Badokas, Kazimieras, et al.
Publicado: (2022)

A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance
por: Liu, Jianhua, et al.
Publicado: (2021)

DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond–GaN Interfaces
por: Sznajder, Malgorzata, et al.
Publicado: (2021)

Polarization Doping in a GaN-InN System—Ab Initio Simulation
por: Ahmad, Ashfaq, et al.
Publicado: (2023)

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires
por: Jegenyes, Nikoletta, et al.
Publicado: (2018)

An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency
por: Jia, Hujun, et al.
Publicado: (2021)

Cannot write session to /tmp/vufind_sessions/sess_tdcg4898h6v2ms4tk4h9t7bmb2