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Memory Impedance in TiO(2) based Metal-Insulator-Metal Devices

Large attention has recently been given to a novel technology named memristor, for having the potential of becoming the new electronic device standard. Yet, its manifestation as the fourth missing element is rather controversial among scientists. Here we demonstrate that TiO(2)-based metal-insulator...

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Detalles Bibliográficos
Autores principales: Qingjiang, Li, Khiat, Ali, Salaoru, Iulia, Papavassiliou, Christos, Hui, Xu, Prodromakis, Themistoklis
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3970129/
https://www.ncbi.nlm.nih.gov/pubmed/24682245
http://dx.doi.org/10.1038/srep04522
_version_ 1782309342198890496
author Qingjiang, Li
Khiat, Ali
Salaoru, Iulia
Papavassiliou, Christos
Hui, Xu
Prodromakis, Themistoklis
author_facet Qingjiang, Li
Khiat, Ali
Salaoru, Iulia
Papavassiliou, Christos
Hui, Xu
Prodromakis, Themistoklis
author_sort Qingjiang, Li
collection PubMed
description Large attention has recently been given to a novel technology named memristor, for having the potential of becoming the new electronic device standard. Yet, its manifestation as the fourth missing element is rather controversial among scientists. Here we demonstrate that TiO(2)-based metal-insulator-metal devices are more than just a memory-resistor. They possess resistive, capacitive and inductive components that can concurrently be programmed; essentially exhibiting a convolution of memristive, memcapacitive and meminductive effects. We show how non-zero crossing current-voltage hysteresis loops can appear and we experimentally demonstrate their frequency response as memcapacitive and meminductive effects become dominant.
format Online
Article
Text
id pubmed-3970129
institution National Center for Biotechnology Information
language English
publishDate 2014
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-39701292014-04-01 Memory Impedance in TiO(2) based Metal-Insulator-Metal Devices Qingjiang, Li Khiat, Ali Salaoru, Iulia Papavassiliou, Christos Hui, Xu Prodromakis, Themistoklis Sci Rep Article Large attention has recently been given to a novel technology named memristor, for having the potential of becoming the new electronic device standard. Yet, its manifestation as the fourth missing element is rather controversial among scientists. Here we demonstrate that TiO(2)-based metal-insulator-metal devices are more than just a memory-resistor. They possess resistive, capacitive and inductive components that can concurrently be programmed; essentially exhibiting a convolution of memristive, memcapacitive and meminductive effects. We show how non-zero crossing current-voltage hysteresis loops can appear and we experimentally demonstrate their frequency response as memcapacitive and meminductive effects become dominant. Nature Publishing Group 2014-03-31 /pmc/articles/PMC3970129/ /pubmed/24682245 http://dx.doi.org/10.1038/srep04522 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/3.0/ This work is licensed under a Creative Commons Attribution 3.0 Unported License. The images in this article are included in the article's Creative Commons license, unless indicated otherwise in the image credit; if the image is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the image. To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0/
spellingShingle Article
Qingjiang, Li
Khiat, Ali
Salaoru, Iulia
Papavassiliou, Christos
Hui, Xu
Prodromakis, Themistoklis
Memory Impedance in TiO(2) based Metal-Insulator-Metal Devices
title Memory Impedance in TiO(2) based Metal-Insulator-Metal Devices
title_full Memory Impedance in TiO(2) based Metal-Insulator-Metal Devices
title_fullStr Memory Impedance in TiO(2) based Metal-Insulator-Metal Devices
title_full_unstemmed Memory Impedance in TiO(2) based Metal-Insulator-Metal Devices
title_short Memory Impedance in TiO(2) based Metal-Insulator-Metal Devices
title_sort memory impedance in tio(2) based metal-insulator-metal devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3970129/
https://www.ncbi.nlm.nih.gov/pubmed/24682245
http://dx.doi.org/10.1038/srep04522
work_keys_str_mv AT qingjiangli memoryimpedanceintio2basedmetalinsulatormetaldevices
AT khiatali memoryimpedanceintio2basedmetalinsulatormetaldevices
AT salaoruiulia memoryimpedanceintio2basedmetalinsulatormetaldevices
AT papavassiliouchristos memoryimpedanceintio2basedmetalinsulatormetaldevices
AT huixu memoryimpedanceintio2basedmetalinsulatormetaldevices
AT prodromakisthemistoklis memoryimpedanceintio2basedmetalinsulatormetaldevices