Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells

We report a time-resolved photoluminescence study for GaInNAs and GaNAsSb p-i-n bulk solar cells grown on GaAs(100). In particular, we studied the extent to which the carrier lifetime decreases with the increase of N content. Rapid thermal annealing proved to significantly increase the decay times b...

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Detalles Bibliográficos
Autores principales: Gubanov, Alexander, Polojärvi, Ville, Aho, Arto, Tukiainen, Antti, Tkachenko, Nikolai V, Guina, Mircea
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3978117/
https://www.ncbi.nlm.nih.gov/pubmed/24533702
http://dx.doi.org/10.1186/1556-276X-9-80
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author Gubanov, Alexander
Polojärvi, Ville
Aho, Arto
Tukiainen, Antti
Tkachenko, Nikolai V
Guina, Mircea
author_facet Gubanov, Alexander
Polojärvi, Ville
Aho, Arto
Tukiainen, Antti
Tkachenko, Nikolai V
Guina, Mircea
author_sort Gubanov, Alexander
collection PubMed
description We report a time-resolved photoluminescence study for GaInNAs and GaNAsSb p-i-n bulk solar cells grown on GaAs(100). In particular, we studied the extent to which the carrier lifetime decreases with the increase of N content. Rapid thermal annealing proved to significantly increase the decay times by a factor of 10 to 12 times, for both GaInNAs and GaNAsSb heterostructures, while for the 1-eV bandgap GaNAsSb structure, grown at the same growth conditions as the GaInNAs, the photoluminescence decay time remained slightly below 100 ps after annealing; the approximately 1.15-eV GaInNAs p-i-n solar cell exhibited a lifetime as long as 900 ps. PACS: 78.47.D; 78.55.Cr; 88.40.hj
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spelling pubmed-39781172014-04-17 Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells Gubanov, Alexander Polojärvi, Ville Aho, Arto Tukiainen, Antti Tkachenko, Nikolai V Guina, Mircea Nanoscale Res Lett Nano Express We report a time-resolved photoluminescence study for GaInNAs and GaNAsSb p-i-n bulk solar cells grown on GaAs(100). In particular, we studied the extent to which the carrier lifetime decreases with the increase of N content. Rapid thermal annealing proved to significantly increase the decay times by a factor of 10 to 12 times, for both GaInNAs and GaNAsSb heterostructures, while for the 1-eV bandgap GaNAsSb structure, grown at the same growth conditions as the GaInNAs, the photoluminescence decay time remained slightly below 100 ps after annealing; the approximately 1.15-eV GaInNAs p-i-n solar cell exhibited a lifetime as long as 900 ps. PACS: 78.47.D; 78.55.Cr; 88.40.hj Springer 2014-02-17 /pmc/articles/PMC3978117/ /pubmed/24533702 http://dx.doi.org/10.1186/1556-276X-9-80 Text en Copyright © 2014 Gubanov et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Gubanov, Alexander
Polojärvi, Ville
Aho, Arto
Tukiainen, Antti
Tkachenko, Nikolai V
Guina, Mircea
Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells
title Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells
title_full Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells
title_fullStr Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells
title_full_unstemmed Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells
title_short Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells
title_sort dynamics of time-resolved photoluminescence in gainnas and ganassb solar cells
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3978117/
https://www.ncbi.nlm.nih.gov/pubmed/24533702
http://dx.doi.org/10.1186/1556-276X-9-80
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