Quantum dot cascade laser

We demonstrated an unambiguous quantum dot cascade laser based on InGaAs/GaAs/InAs/InAlAs heterostructure by making use of self-assembled quantum dots in the Stranski-Krastanow growth mode and two-step strain compensation active region design. The prototype generates stimulated emission at λ ~ 6.15 ...

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Detalles Bibliográficos
Autores principales: Zhuo, Ning, Liu, Feng Qi, Zhang, Jin Chuan, Wang, Li Jun, Liu, Jun Qi, Zhai, Shen Qiang, Wang, Zhan Guo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3978137/
https://www.ncbi.nlm.nih.gov/pubmed/24666965
http://dx.doi.org/10.1186/1556-276X-9-144
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author Zhuo, Ning
Liu, Feng Qi
Zhang, Jin Chuan
Wang, Li Jun
Liu, Jun Qi
Zhai, Shen Qiang
Wang, Zhan Guo
author_facet Zhuo, Ning
Liu, Feng Qi
Zhang, Jin Chuan
Wang, Li Jun
Liu, Jun Qi
Zhai, Shen Qiang
Wang, Zhan Guo
author_sort Zhuo, Ning
collection PubMed
description We demonstrated an unambiguous quantum dot cascade laser based on InGaAs/GaAs/InAs/InAlAs heterostructure by making use of self-assembled quantum dots in the Stranski-Krastanow growth mode and two-step strain compensation active region design. The prototype generates stimulated emission at λ ~ 6.15 μm and a broad electroluminescence band with full width at half maximum over 3 μm. The characteristic temperature for the threshold current density within the temperature range of 82 to 162 K is up to 400 K. Moreover, our materials show the strong perpendicular mid-infrared response at about 1,900 cm(-1). These results are very promising for extending the present laser concept to terahertz quantum cascade laser, which would lead to room temperature operation. PACS: 42.55.Px; 78.55.Cr; 78.67.Hc
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spelling pubmed-39781372014-04-17 Quantum dot cascade laser Zhuo, Ning Liu, Feng Qi Zhang, Jin Chuan Wang, Li Jun Liu, Jun Qi Zhai, Shen Qiang Wang, Zhan Guo Nanoscale Res Lett Nano Express We demonstrated an unambiguous quantum dot cascade laser based on InGaAs/GaAs/InAs/InAlAs heterostructure by making use of self-assembled quantum dots in the Stranski-Krastanow growth mode and two-step strain compensation active region design. The prototype generates stimulated emission at λ ~ 6.15 μm and a broad electroluminescence band with full width at half maximum over 3 μm. The characteristic temperature for the threshold current density within the temperature range of 82 to 162 K is up to 400 K. Moreover, our materials show the strong perpendicular mid-infrared response at about 1,900 cm(-1). These results are very promising for extending the present laser concept to terahertz quantum cascade laser, which would lead to room temperature operation. PACS: 42.55.Px; 78.55.Cr; 78.67.Hc Springer 2014-03-25 /pmc/articles/PMC3978137/ /pubmed/24666965 http://dx.doi.org/10.1186/1556-276X-9-144 Text en Copyright © 2014 Zhuo et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Zhuo, Ning
Liu, Feng Qi
Zhang, Jin Chuan
Wang, Li Jun
Liu, Jun Qi
Zhai, Shen Qiang
Wang, Zhan Guo
Quantum dot cascade laser
title Quantum dot cascade laser
title_full Quantum dot cascade laser
title_fullStr Quantum dot cascade laser
title_full_unstemmed Quantum dot cascade laser
title_short Quantum dot cascade laser
title_sort quantum dot cascade laser
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3978137/
https://www.ncbi.nlm.nih.gov/pubmed/24666965
http://dx.doi.org/10.1186/1556-276X-9-144
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AT zhangjinchuan quantumdotcascadelaser
AT wanglijun quantumdotcascadelaser
AT liujunqi quantumdotcascadelaser
AT zhaishenqiang quantumdotcascadelaser
AT wangzhanguo quantumdotcascadelaser

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