Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators

The plasma dispersion effect and free-carrier absorption are widely used to change refractive index and absorption coefficient in Si-based optical modulators. However, the weak free-carrier effects in Si cause low modulation efficiency, resulting in large device footprint and power consumption. Here...

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Detalles Bibliográficos
Autores principales: Kim, Younghyun, Takenaka, Mitsuru, Osada, Takenori, Hata, Masahiko, Takagi, Shinichi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3986731/
https://www.ncbi.nlm.nih.gov/pubmed/24732468
http://dx.doi.org/10.1038/srep04683

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3986731/
https://www.ncbi.nlm.nih.gov/pubmed/24732468
http://dx.doi.org/10.1038/srep04683

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