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Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators
The plasma dispersion effect and free-carrier absorption are widely used to change refractive index and absorption coefficient in Si-based optical modulators. However, the weak free-carrier effects in Si cause low modulation efficiency, resulting in large device footprint and power consumption. Here...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3986731/ https://www.ncbi.nlm.nih.gov/pubmed/24732468 http://dx.doi.org/10.1038/srep04683 |