Cargando…

High performance p-type organic thin film transistors with an intrinsically photopatternable, ultrathin polymer dielectric layer()

A high-performing bottom-gate top-contact pentacene-based oTFT technology with an ultrathin (25–48 nm) and electrically dense photopatternable polymeric gate dielectric layer is reported. The photosensitive polymer poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDP...

Descripción completa

Detalles Bibliográficos
Autores principales: Petritz, Andreas, Wolfberger, Archim, Fian, Alexander, Krenn, Joachim R., Griesser, Thomas, Stadlober, Barbara
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier Science 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3990428/
https://www.ncbi.nlm.nih.gov/pubmed/24748853
http://dx.doi.org/10.1016/j.orgel.2013.07.014
_version_ 1782312278553526272
author Petritz, Andreas
Wolfberger, Archim
Fian, Alexander
Krenn, Joachim R.
Griesser, Thomas
Stadlober, Barbara
author_facet Petritz, Andreas
Wolfberger, Archim
Fian, Alexander
Krenn, Joachim R.
Griesser, Thomas
Stadlober, Barbara
author_sort Petritz, Andreas
collection PubMed
description A high-performing bottom-gate top-contact pentacene-based oTFT technology with an ultrathin (25–48 nm) and electrically dense photopatternable polymeric gate dielectric layer is reported. The photosensitive polymer poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) is patterned directly by UV-exposure (λ = 254 nm) at a dose typical for conventionally used negative photoresists without the need for any additional photoinitiator. The polymer itself undergoes a photo-Fries rearrangement reaction under UV illumination, which is accompanied by a selective cross-linking of the macromolecules, leading to a change in solubility in organic solvents. This crosslinking reaction and the negative photoresist behavior are investigated by means of sol–gel analysis. The resulting transistors show a field-effect mobility up to 0.8 cm(2) V(−1) s(−1) at an operation voltage as low as −4.5 V. The ultra-low subthreshold swing in the order of 0.1 V dec(−1) as well as the completely hysteresis-free transistor characteristics are indicating a very low interface trap density. It can be shown that the device performance is completely stable upon UV-irradiation and development according to a very robust chemical rearrangement. The excellent interface properties, the high stability and the small thickness make the PNDPE gate dielectric a promising candidate for fast organic electronic circuits.
format Online
Article
Text
id pubmed-3990428
institution National Center for Biotechnology Information
language English
publishDate 2013
publisher Elsevier Science
record_format MEDLINE/PubMed
spelling pubmed-39904282014-04-18 High performance p-type organic thin film transistors with an intrinsically photopatternable, ultrathin polymer dielectric layer() Petritz, Andreas Wolfberger, Archim Fian, Alexander Krenn, Joachim R. Griesser, Thomas Stadlober, Barbara Org Electron Article A high-performing bottom-gate top-contact pentacene-based oTFT technology with an ultrathin (25–48 nm) and electrically dense photopatternable polymeric gate dielectric layer is reported. The photosensitive polymer poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) is patterned directly by UV-exposure (λ = 254 nm) at a dose typical for conventionally used negative photoresists without the need for any additional photoinitiator. The polymer itself undergoes a photo-Fries rearrangement reaction under UV illumination, which is accompanied by a selective cross-linking of the macromolecules, leading to a change in solubility in organic solvents. This crosslinking reaction and the negative photoresist behavior are investigated by means of sol–gel analysis. The resulting transistors show a field-effect mobility up to 0.8 cm(2) V(−1) s(−1) at an operation voltage as low as −4.5 V. The ultra-low subthreshold swing in the order of 0.1 V dec(−1) as well as the completely hysteresis-free transistor characteristics are indicating a very low interface trap density. It can be shown that the device performance is completely stable upon UV-irradiation and development according to a very robust chemical rearrangement. The excellent interface properties, the high stability and the small thickness make the PNDPE gate dielectric a promising candidate for fast organic electronic circuits. Elsevier Science 2013-11 /pmc/articles/PMC3990428/ /pubmed/24748853 http://dx.doi.org/10.1016/j.orgel.2013.07.014 Text en © 2013 The Authors https://creativecommons.org/licenses/by/3.0/Open Access under CC BY 3.0 (https://creativecommons.org/licenses/by/3.0/) license
spellingShingle Article
Petritz, Andreas
Wolfberger, Archim
Fian, Alexander
Krenn, Joachim R.
Griesser, Thomas
Stadlober, Barbara
High performance p-type organic thin film transistors with an intrinsically photopatternable, ultrathin polymer dielectric layer()
title High performance p-type organic thin film transistors with an intrinsically photopatternable, ultrathin polymer dielectric layer()
title_full High performance p-type organic thin film transistors with an intrinsically photopatternable, ultrathin polymer dielectric layer()
title_fullStr High performance p-type organic thin film transistors with an intrinsically photopatternable, ultrathin polymer dielectric layer()
title_full_unstemmed High performance p-type organic thin film transistors with an intrinsically photopatternable, ultrathin polymer dielectric layer()
title_short High performance p-type organic thin film transistors with an intrinsically photopatternable, ultrathin polymer dielectric layer()
title_sort high performance p-type organic thin film transistors with an intrinsically photopatternable, ultrathin polymer dielectric layer()
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3990428/
https://www.ncbi.nlm.nih.gov/pubmed/24748853
http://dx.doi.org/10.1016/j.orgel.2013.07.014
work_keys_str_mv AT petritzandreas highperformanceptypeorganicthinfilmtransistorswithanintrinsicallyphotopatternableultrathinpolymerdielectriclayer
AT wolfbergerarchim highperformanceptypeorganicthinfilmtransistorswithanintrinsicallyphotopatternableultrathinpolymerdielectriclayer
AT fianalexander highperformanceptypeorganicthinfilmtransistorswithanintrinsicallyphotopatternableultrathinpolymerdielectriclayer
AT krennjoachimr highperformanceptypeorganicthinfilmtransistorswithanintrinsicallyphotopatternableultrathinpolymerdielectriclayer
AT griesserthomas highperformanceptypeorganicthinfilmtransistorswithanintrinsicallyphotopatternableultrathinpolymerdielectriclayer
AT stadloberbarbara highperformanceptypeorganicthinfilmtransistorswithanintrinsicallyphotopatternableultrathinpolymerdielectriclayer