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Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >10(5) cycles, and good data retention of >10(4) s with a good resistance ratio of >10(2) at 85°C are obtained using a Ti nanolayer to form a W/TiO(x)/TaO(x)/W str...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3995362/ https://www.ncbi.nlm.nih.gov/pubmed/24636463 http://dx.doi.org/10.1186/1556-276X-9-125 |
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author | Prakash, Amit Maikap, Siddheswar Chiu, Hsien-Chin Tien, Ta-Chang Lai, Chao-Sung |
author_facet | Prakash, Amit Maikap, Siddheswar Chiu, Hsien-Chin Tien, Ta-Chang Lai, Chao-Sung |
author_sort | Prakash, Amit |
collection | PubMed |
description | Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >10(5) cycles, and good data retention of >10(4) s with a good resistance ratio of >10(2) at 85°C are obtained using a Ti nanolayer to form a W/TiO(x)/TaO(x)/W structure under a low current operation of 80 μA, while few switching cycles are observed for W/TaO(x)/W structure under a higher current compliance >300 μA. The low resistance state decreases with increasing current compliances from 10 to 100 μA, and the device could be operated at a low RESET current of 23 μA. A small device size of 150 × 150 nm(2) is observed by transmission electron microscopy. The presence of oxygen-deficient TaO(x) nanofilament in a W/TiO(x)/TaO(x)/W structure after switching is investigated by Auger electron spectroscopy. Oxygen ion (negative charge) migration is found to lead to filament formation/rupture, and it is controlled by Ti nanolayer at the W/TaO(x) interface. Conducting nanofilament diameter is estimated to be 3 nm by a new method, indicating a high memory density of approximately equal to 100 Tbit/in.(2). |
format | Online Article Text |
id | pubmed-3995362 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-39953622014-05-01 Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface Prakash, Amit Maikap, Siddheswar Chiu, Hsien-Chin Tien, Ta-Chang Lai, Chao-Sung Nanoscale Res Lett Nano Express Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >10(5) cycles, and good data retention of >10(4) s with a good resistance ratio of >10(2) at 85°C are obtained using a Ti nanolayer to form a W/TiO(x)/TaO(x)/W structure under a low current operation of 80 μA, while few switching cycles are observed for W/TaO(x)/W structure under a higher current compliance >300 μA. The low resistance state decreases with increasing current compliances from 10 to 100 μA, and the device could be operated at a low RESET current of 23 μA. A small device size of 150 × 150 nm(2) is observed by transmission electron microscopy. The presence of oxygen-deficient TaO(x) nanofilament in a W/TiO(x)/TaO(x)/W structure after switching is investigated by Auger electron spectroscopy. Oxygen ion (negative charge) migration is found to lead to filament formation/rupture, and it is controlled by Ti nanolayer at the W/TaO(x) interface. Conducting nanofilament diameter is estimated to be 3 nm by a new method, indicating a high memory density of approximately equal to 100 Tbit/in.(2). Springer 2014-03-17 /pmc/articles/PMC3995362/ /pubmed/24636463 http://dx.doi.org/10.1186/1556-276X-9-125 Text en Copyright © 2014 Prakash et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited. |
spellingShingle | Nano Express Prakash, Amit Maikap, Siddheswar Chiu, Hsien-Chin Tien, Ta-Chang Lai, Chao-Sung Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface |
title | Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface |
title_full | Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface |
title_fullStr | Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface |
title_full_unstemmed | Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface |
title_short | Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface |
title_sort | enhanced resistive switching memory characteristics and mechanism using a ti nanolayer at the w/tao(x) interface |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3995362/ https://www.ncbi.nlm.nih.gov/pubmed/24636463 http://dx.doi.org/10.1186/1556-276X-9-125 |
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